# US 2014/0151787 A1 · Electronic device including a trench and a conductive structure therein

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- Number: US 2014/0151787 A1
- Document ID: US20140151787A1
- Status: Published application
- Kind: A1
- Application number: 14/176,185
- Filed: 2014-02-10
- Published: 2014-06-05
- Earliest claimed: 2012-02-24
- Assignees: Semiconductor Components Industries, LLC
- Applicants: Semiconductor Components Industries, LLC
- Inventors: Prasad VENKATRAMAN; Balaji PADMANABHAN
- Web page: https://patentgrep.com/patent/US20140151787A1

## CPC

- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 30/0295: {using recessing of the source electrodes}
- H10D 30/0297: {using recessing of the gate electrodes, e.g. to form trench gate electrodes}
- H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence)
- H10D 30/665: {having edge termination structures}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates}
- H10D 64/2527: {for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate. The electronic device can further include a first conductive electrode and a gate electrode within the first trench. The electronic device can still further include a second conductive electrode within the second trench. The electronic device can include a source region within the patterned semiconductor layer and disposed between the first and second trenches. The electronic device can further include a body contact region within the patterned semiconductor layer and between the first and second trenches, wherein the body contact region is spaced apart from the primary surface. Processes of forming the electronic device can take advantage of forming all trenches during processing sequence.

## Claims

### Claim 1

An electronic device comprising a transistor structure, comprising:
a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate;
a first conductive structure within the first trench;
a gate electrode within the first trench and electrically insulated from the first conductive structure;
a second conductive structure within the second trench, wherein no gate electrode is disposed above the second conductive structure;
a source region within the patterned semiconductor layer and disposed between the first and second trenches; and
a body contact region within the patterned semiconductor layer and between the first and second trenches, wherein the body contact region is spaced apart from the primary surface.

### Claim 2 (depends on 1)

The electronic device of claim 1, wherein, from a cross sectional view, the source region is disposed along opposite sides of the first trench.

### Claim 3 (depends on 1)

The electronic device of claim 1, wherein the body contact region is spaced apart from a sidewall of the second trench.

### Claim 4 (depends on 1)

The electronic device of claim 1, further comprising a conductive plug and an interconnect member, wherein the conductive plug extends between and directly contacts the interconnect member and the body contact region.

### Claim 5 (depends on 1)

The electronic device of claim 1, wherein the first and second trenches have substantially a same depth.

### Claim 6 (depends on 1)

The electronic device of claim 1, wherein the first trench is wider than the second trench.

### Claim 7 (depends on 1)

The electronic device of claim 1, wherein the first and second conductive structures are electrically connected to each other.

### Claim 8

An electronic device comprising a transistor structure, comprising:
a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate and are within an active region;
a first conductive structure within the first trench;
a second conductive structure within the second trench;
a first insulating layer within the first trench between the first conductive structure and the semiconductor layer;
a second insulating layer within the second trench between the second conductive structure and the semiconductor layer;
a gate electrode within the first trench;
a third insulating layer within the first trench between the gate electrode and the first conductive structure; and
a body contact region within the patterned semiconductor layer and between the first and second trenches,
wherein the body contact region is spaced apart from the primary surface, and wherein no gate electrode is disposed above the second conductive structure.

### Claim 9 (depends on 8)

The electronic device of claim 8, wherein the first and second trenches have substantially a same depth.

### Claim 10 (depends on 8)

The electronic device of claim 8, wherein the first trench is wider than the second trench.

### Claim 11 (depends on 8)

The electronic device of claim 8, wherein the patterned semiconductor layer defines additional first trenches and additional second trenches in the active region, wherein a ratio of a number of the first trenches to a number of the second trenches is approximately 1:1.

### Claim 12 (depends on 11)

The electronic device of claim 11, wherein the additional first trenches each have an additional first conductive structure and an additional gate electrode, and wherein the additional second trenches each have an additional second conductive structure and no gate electrode.

### Claim 13

An electronic device comprising a transistor structure, comprising:
a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench, a second trench, and a third trench that extend from the primary surface towards the substrate, wherein the first, second, and third trenches are within an active region, and the third trench is disposed between the first and second trenches;
a first conductive structure within the first trench;
a first gate electrode within the first trench and electrically insulated from the first conductive structure;
a second conductive structure within the second trench;
a second gate electrode within the second trench and electrically insulated from the second conductive structure; and
a third conductive structure within the third trench, wherein no gate electrode is disposed above the third conductive structure.

### Claim 14 (depends on 13)

The electronic device of claim 13, further comprising:
a first insulating layer disposed within the first trench and electrically insulating the first gate electrode from the first conductive structure; and
a second insulating layer disposed within the second trench and electrically insulating the second gate electrode from the second conductive structure.

### Claim 15 (depends on 13)

The electronic device of claim 13, further comprising a body contact region disposed within the patterned semiconductor layer along opposite sides of the third trench, wherein the body contact region is spaced apart from the primary surface.

### Claim 16 (depends on 13)

The electronic device of claim 13, further comprising a source region disposed within the patterned semiconductor layer along opposite sides of the third trench.

### Claim 17 (depends on 13)

The electronic device of claim 13, wherein a ratio of a number of the first trenches to a number of the second trenches is approximately 1:1.

### Claim 18 (depends on 13)

The electronic device of claim 13, wherein the first, second and third trenches have substantially a same depth.

### Claim 19 (depends on 13)

The electronic device of claim 13, wherein the first and second trenches are each wider than the third trench.

### Claim 20 (depends on 13)

The electronic device of claim 13, wherein the first, second, and third conductive structures are electrically connected to each other.