# US 2014/0151771 A1 · Thin film deposition and logic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0151771 A1 - Document ID: US20140151771A1 - Status: Published application - Kind: A1 - Application number: 13/965,781 - Filed: 2013-08-13 - Published: 2014-06-05 - Earliest claimed: 2012-11-30 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Ching-Tzu Chen; Marcin J. Gajek; Simone Raoux - Web page: https://patentgrep.com/patent/US20140151771A1 ## CPC - H10N 50/01: Manufacture or treatment - C23C 14/024: {Deposition of sublayers, e.g. to promote adhesion of the coating (C23C14/027 takes precedence)} - C23C 14/08: Oxides (C23C14/10 takes precedence) - C23C 14/225: {Oblique incidence of vaporised material on substrate} - C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} - H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes} - H10D 30/6739: {Conductor-insulator-semiconductor electrodes} - H10D 30/6741: {Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755)} - H10D 48/01: Manufacture or treatment - H10D 48/385: {Devices using spin-polarised carriers} - H10D 64/033: {comprising ferroelectric layers} - H10D 64/689: {having ferroelectric layers} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites - B82Y 40/00: Manufacture or treatment of nanostructures - H10D 62/882: {Graphene} - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer. ## Claims ### Claim 1 A spintronic transistor device comprising: a graphene channel portion arranged on an insulator layer; an injector portion arranged on a portion of the graphene channel portion, the injector portion including a ferromagnetic insulator layer disposed on the graphene channel portion and a non-magnetic metallic electrode layer disposed on the ferromagnetic insulator layer; a detector portion arranged on a portion of the graphene channel portion, the detector portion including a ferromagnetic insulator layer disposed on the graphene channel portion and a non-magnetic metallic electrode layer disposed on the ferromagnetic insulator layer; and an exchange gate portion arranged on a portion of the graphene channel portion, the exchange gate portion including a ferromagnetic insulator layer deposited on the graphene channel portion and a gate electrode layer deposited on the ferromagnetic insulator layer. ### Claim 2 (depends on 1) The device of claim 1, wherein the ferromagnetic insulator layers of the detector portion, the injector portion, and the exchange gate portion have a thickness of less than 10 nm. ### Claim 3 (depends on 1) The device of claim 1, wherein the electrode layers of the detector portion, the injector portion, and the exchange gate portion is selected from the group consisting of Au, Pt, Al, Ti, and Pd. ### Claim 4 (depends on 1) The device of claim 1, wherein the ferromagnetic insulator layer includes an insulating ferrite material that is selected from the group consisting of CoFe2O4, NiFe2O4, MnFe2O4, or ZnFe2O4; an insulating europium chalcogenide material that is selected from the group consisting of EuS and EuO; or includes a diluted magnetic semiconductor material that is selected from the group consisting of TiO2:Co and GaMnAs. ### Claim 5 (depends on 1) The device of claim 1, wherein the electrode layer includes magnetic multilayer stack of materials. ### Claim 6 (depends on 5) The device of claim 5, wherein the magnetic metallic multilayer stack includes Co/Pt, Co/Pd, and Co/Ni. ### Claim 7 (depends on 1) The device of claim 1, wherein the exchange gate portion arranged between the injector portion and the detector portion. ### Claim 8 (depends on 1) The device of claim 1, wherein the injector portion and the detector portion are spaced a distance that is within a spin diffusion length of the graphene channel portion. ### Claim 9 A spintronic transistor device comprising: a carbon nanotube channel portion arranged on an insulator layer; an injector portion arranged on a portion of the carbon nanotube channel portion, the injector portion including a ferromagnetic insulator layer disposed on the carbon nanotube channel portion and an electrode layer disposed on the ferromagnetic insulator layer; a detector portion arranged on a portion of the carbon nanotube channel portion, the detector portion including a ferromagnetic insulator layer disposed on the carbon nanotube channel portion and an electrode layer disposed on the ferromagnetic insulator layer; and an exchange gate portion arranged on a portion of the carbon nanotube channel portion, the exchange gate portion including a ferromagnetic insulator layer deposited on the carbon nanotube channel portion and a gate electrode layer deposited on the ferromagnetic insulator layer.