# US 2014/0151754 A1 · Solid-state image pickup device and method of manufacturing same

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- Number: US 2014/0151754 A1
- Document ID: US20140151754A1
- Status: Published application
- Kind: A1
- Application number: 14/176,347
- Filed: 2014-02-10
- Published: 2014-06-05
- Earliest claimed: 2008-03-05
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Shinichi Arakawa
- Web page: https://patentgrep.com/patent/US20140151754A1

## CPC

- H10F 39/182: {Colour image sensors}
- H10F 39/014: {of CMOS image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F 39/80373: {characterised by the gate of the transistor}
- H10F 39/8053: {Colour filters}
- H10F 39/8057: {Optical shielding}
- H10F 39/8063: {Microlenses}
- H10F 39/807: {Pixel isolation structures}
- H10F 39/811: {Interconnections}
- H10F 77/00: Constructional details of devices covered by this subclass (constructional details of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00)
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.

## Claims

### Claim 1

A solid-state imaging device, comprising:
a semiconductor substrate;
a pixel section having a plurality of pixels in the substrate, each which includes at least one photoelectric conversion portion and an amplifier portion having one or more diffusion layers and a gate electrode; and
for each pixel, a film extending from the gate electrode to each of the diffusion layers.

### Claim 2 (depends on 1)

The solid-state imaging device according to claim 1, wherein the film is formed to apply a compressive stress.

### Claim 3 (depends on 1)

The solid-state imaging device according to claim 1, wherein each of the pixels includes a transfer portion to transfer a charge generated by the photoelectric conversion portion to a floating diffusion portion.

### Claim 4 (depends on 3)

The solid-state imaging device according to claim 3, wherein, for each pixel, the floating diffusion portion connects to the gate electrode of the amplifier portion.

### Claim 5 (depends on 4)

The solid-state imaging device according to claim 4, wherein each of the pixels includes a reset transistor portion to reset the floating diffusion.

### Claim 6 (depends on 1)

The solid-state imaging device according to claim 1, further comprising a silicide block layer covering the pixel section.

### Claim 7 (depends on 1)

The solid-state imaging device according to claim 1, further comprising, for each pixel, a silicide layer formed on the surface of the diffusion layer of the amplifier portion.

### Claim 8 (depends on 1)

The solid-state imaging device according to claim 1, further comprising, for each pixel, an isolation portion adjacent to an active region of the amplifier portion.

### Claim 9 (depends on 8)

The solid-state imaging device according to claim 8, wherein the isolation portion is a shallow trench isolation structure.

### Claim 10 (depends on 1)

The solid-state imaging device according to claim 1, further comprising for each pixel, a side wall having a compressive stress formed on sides of the gate electrode of the amplifying portion.

### Claim 11

A method of producing a solid state imaging device, comprising:
providing a semiconductor substrate;
forming a pixel section having a plurality of pixels in the substrate, each which includes at least one photoelectric conversion portion and an amplifier portion having one or more diffusion layers and a gate electrode; and
for each pixel, forming a film extending from the gate electrode to each of the diffusion layers.

### Claim 12 (depends on 11)

The method of claim 11, wherein the film is formed to apply a compressive stress.

### Claim 13 (depends on 11)

The method of claim 11, further comprising forming for each of the pixels a transfer portion to transfer a charge generated by the photoelectric conversion portion to a floating diffusion portion.

### Claim 14 (depends on 3)

The method of claim 3, wherein the floating diffusion portion connects to the gate electrode of the amplifier portion.

### Claim 15 (depends on 14)

The method of claim 14, further wherein each of the pixels includes a reset transistor portion to reset the floating diffusion.

### Claim 16 (depends on 11)

The method of claim 11, further comprising forming a silicide block layer covering the pixel section.

### Claim 17 (depends on 11)

The method of claim 11, further comprising forming, for each pixel, a silicide layer on the surface of the diffusion layer of the amplifier portion.

### Claim 18 (depends on 11)

The method of claim 11, wherein each pixel comprises an isolation portion adjacent to an active region of the amplifier portion.

### Claim 19 (depends on 18)

The method of claim 18, wherein the isolation portion is shallow trench isolation structure.

### Claim 20 (depends on 11)

The method of claim 11, further comprising forming, for each pixel, a side wall having a compressive stress on sides of the gate electrode of the amplifying portion.