# US 2014/0151747 A1 · High electron mobility transistor including plurality of gate electrodes

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- Number: US 2014/0151747 A1
- Document ID: US20140151747A1
- Status: Published application
- Kind: A1
- Application number: 14/018,833
- Filed: 2013-09-05
- Published: 2014-06-05
- Earliest claimed: 2012-11-30
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Woo-chul JEON; Young-hwan PARK; Ki-yeol PARK; Jai-kwang SHIN; Jae-joon OH; Jong-bong HA; Sun-kyu HWANG
- Web page: https://patentgrep.com/patent/US20140151747A1

## CPC

- H10D 64/411: {for FETs}
- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode.

## Claims

### Claim 1

A high electron mobility transistor comprising:
a channel layer comprising a first semiconductor material;
a channel supply layer on the channel layer,
the channel supply layer comprising a second semiconductor material,
the channel supply layer configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, and
an upper surface of the channel supply layer defining a gate electrode receiving part;
source and drain electrodes spaced apart from each other on the channel layer;
a first gate electrode in the gate electrode receiving part and between the source electrode and the drain electrode;
at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part,
the at least one second gate electrode between the source electrode and the first gate electrode.

### Claim 2 (depends on 1)

The high electron mobility transistor of claim 1, wherein
the at least one second gate electrode includes a floating electrode, and
the first gate electrode is configured to induce a second gate voltage into the floating electrode if a first gate voltage is applied to the first gate electrode.

### Claim 3 (depends on 2)

The high electron mobility transistor of claim 2, wherein
the gate electrode receiving part comprises a first gate electrode receiving part and a second gate electrode receiving part,
the first gate electrode is in the first gate electrode receiving part, and
the at least one second gate electrode is in the second gate electrode receiving part.

### Claim 4 (depends on 3)

The high electron mobility transistor of claim 3, wherein
the gate electrode receiving part has a recess shape, and
the gate electrode receiving part is recessed toward the channel layer.

### Claim 5 (depends on 4)

The high electron mobility transistor of claim 4, wherein a depth of the gate electrode receiving part extends to one of:
an interface between the channel layer and the channel supply layer, and
a depth less than the interface between the channel layer and the channel supply layer.

### Claim 6 (depends on 4)

The high electron mobility transistor of claim 4, wherein a depth of the first gate electrode receiving part is less than a depth of the second gate electrode receiving part.

### Claim 7 (depends on 2)

The high electron mobility transistor of claim 2, further comprising:
an insulation layer between the gate electrode receiving part and the first and second gate electrodes.

### Claim 8 (depends on 2)

The high electron mobility transistor of claim 2, wherein the first gate electrode is configured to induce the second gate voltage into the floating electrode through a top surface of the channel supply layer if the first gate voltage is applied to the first gate electrode.

### Claim 9 (depends on 2)

The high electron mobility transistor of claim 2, wherein the second gate voltage induced into the second gate electrode is determined by the first gate voltage applied to the first gate electrode, a distance between the first gate electrode and the floating electrode, and a distance between the floating electrode and the source electrode.

### Claim 10 (depends on 9)

The high electron mobility transistor of claim 9, wherein a threshold voltage of the high electron mobility transistor is affected by the second gate voltage induced into the floating electrode.

### Claim 11 (depends on 1)

The high electron mobility transistor of claim 1, wherein the first semiconductor material is a GaN-based material.

### Claim 12 (depends on 1)

The high electron mobility transistor of claim 1, wherein the second semiconductor material includes at least one nitride that includes at least one of Al, Ga, In, and B.

### Claim 13 (depends on 1)

The high electron mobility transistor of claim 1, further comprising:
a first resistive layer connecting the first gate electrode to one of the at least one second gate electrode; and
a second resistive layer connecting one of the at least one second gate electrode to the source electrode.

### Claim 14 (depends on 13)

The high electron mobility transistor of claim 13, wherein at least one of the first and second resistive layers has a stripe shape.

### Claim 15 (depends on 13)

The high electron mobility transistor of claim 13, wherein at least one of the first and second resistive layers has a film shape.

### Claim 16 (depends on 13)

The high electron mobility transistor of claim 13, wherein a resistance value of each of the first and second resistive layers is greater than about 100 kΩ.

### Claim 17 (depends on 13)

The high electron mobility transistor of claim 13, wherein the second gate voltage induced into the floating electrode is determined by the first gate voltage applied to the first gate electrode, a resistance value of the first resistive layer, and a resistance value of the second resistive layer.

### Claim 18 (depends on 13)

The high electron mobility transistor of claim 13, wherein at least one of the first and second resistive layers is on the channel supply layer.

### Claim 19 (depends on 18)

The high electron mobility transistor of claim 18, further comprising:
an insulation layer between the channel supply layer and at least one of the first and second resistive layers.

### Claim 20

A high electron mobility transistor comprising:
a channel layer comprising a first semiconductor material;
a channel supply layer on the channel layer,
the channel supply layer comprising a second semiconductor material,
the channel supply layer configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, and
an upper surface of the channel supply layer defining a gate electrode receiving part;
source and drain electrodes spaced apart from each other on the channel layer;
a first gate electrode on the channel supply layer between the source electrode and the drain electrode;
at least one second gate electrode in the gate electrode receiving part,
the at least one second gate electrode spaced apart from the first gate electrode and between the source electrode and the first gate electrode.

### Claim 21 (depends on 20)

The high electron mobility transistor of claim 20, wherein
the at least one second gate electrode includes a floating electrode, and
the first gate electrode is configured to induce a second gate voltage into the floating electrode if a first gate voltage is applied to the first gate electrode.

### Claim 22 (depends on 20)

The high electron mobility transistor of claim 20, wherein
the gate electrode receiving part has a recess shape,
the gate electrode receiving part is recessed toward the channel layer, and a depth of the gate electrode receiving part extends to one of
an interface between the channel layer and the channel supply layer, and
a depth less than the interface between the channel layer and the channel supply layer.

### Claim 23 (depends on 20)

The high electron mobility transistor of claim 20, further comprising:
a first resistive layer connecting the first gate electrode to one of the at least one second gate electrode; and
a second resistive layer connecting one of the at least one second gate electrode to the source electrode.

### Claim 24 (depends on 23)

The high electron mobility transistor of claim 23, wherein at least one of the first and second resistive layers has a stripe shape.

### Claim 25 (depends on 23)

The high electron mobility transistor of claim 23, wherein at least one of the first and second resistive layers has a film shape.

### Claim 26 (depends on 23)

The high electron mobility transistor of claim 23, wherein a resistance value of each of the first and second resistive layers is greater than about 100 kΩ.

### Claim 27 (depends on 23)

The high electron mobility transistor of claim 23, wherein the second gate voltage induced into the floating electrode is determined by the first gate voltage applied to the first gate electrode, a resistance value of the first resistive layer, and a resistance value of the second resistive layer.

### Claim 28 (depends on 23)

The high electron mobility transistor of claim 23, wherein at least one of the first and second resistive layers is on the channel supply layer.

### Claim 29 (depends on 28)

The high electron mobility transistor of claim 28, further comprising:
an insulation layer between the channel supply layer and at least one of the first and second resistive layers.