# US 2014/0151743 A1 · Electrostatic discharge protection device

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- Number: US 2014/0151743 A1
- Document ID: US20140151743A1
- Status: Published application
- Kind: A1
- Application number: 14/094,039
- Filed: 2013-12-02
- Published: 2014-06-05
- Earliest claimed: 2012-12-04
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Jaehyok Ko; Hangu Kim; Minchang Ko; Kyoungki Jeon
- Web page: https://patentgrep.com/patent/US20140151743A1

## CPC

- H10D 89/813: {specially adapted to provide an electrical current path other than the field-effect induced current path}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An electrostatic discharge protection device may include a first conductivity type well, a second conductivity well; a first doping region and a second doping region which are formed in the first conductivity type well and have different conductivity types from each other; a third doping region and a fourth doping region which are formed in the second conductivity type well and have different conductivity types from each other; and a fifth doping region formed in the second conductivity type well between the first and second doping regions and the third and fourth doping regions.

## Claims

### Claim 1

An electrostatic discharge protection device comprising:
a first conductivity type well;
a second conductivity type well in contact with the first conductivity type well;
first and second doping regions formed in the first conductivity type well, connected to a first electrode in common and having different conductivity types from each other;
third and fourth doping regions formed in the second conductivity type well, connected to a second electrode in common and having different conductivity types from each other; and
a fifth doping region formed in the second conductivity type well between the first and second doping regions and the third and fourth doping regions

### Claim 2 (depends on 1)

The electrostatic discharge protection device of claim 1, wherein the first conductivity type well is a P conductivity type well.

### Claim 3 (depends on 1)

The electrostatic discharge protection device of claim 1, wherein the second conductivity type well is an N conductivity type well.

### Claim 4 (depends on 1)

The electrostatic discharge protection device of claim 1, wherein the second doping region is between the first doping region and the fifth doping region, and
wherein the first doping region is a P conductivity type and the second doping region is an N conductivity type.

### Claim 5 (depends on 4)

The electrostatic discharge protection device of claim 4, wherein the second doping region includes a plurality of doping regions spaced apart from one another and the plurality of doping regions spaced apart from one another are connected to the first electrode in common.

### Claim 6 (depends on 1)

The electrostatic discharge protection device of claim 1, wherein the third doping region is between the fourth doping region and the fifth doping region, and
wherein the third doping region is a P conductivity type and the fourth doping region is an N conductivity type.

### Claim 7 (depends on 6)

The electrostatic discharge protection device of claim 6, wherein the third doping region includes a plurality of doping regions spaced apart from one another and the plurality of doping regions spaced apart from one another are connected to the second electrode in common.

### Claim 8 (depends on 1)

The electrostatic discharge protection device of claim 1, wherein the fifth doping region is an N conductivity type.

### Claim 9 (depends on 1)

The electrostatic discharge protection device of claim 1, wherein the second conductivity type well is formed in the first conductivity type well.

### Claim 10 (depends on 1)

The electrostatic discharge protection device of claim 1, wherein the fifth doping region is spaced apart from the third and fourth doping regions.

### Claim 11 (depends on 1)

The electrostatic discharge protection device of claim 1, further comprising a device isolation layer formed at an interface between the first conductivity type well and the second conductivity type well.

### Claim 12 (depends on 1)

The electrostatic discharge protection device of claim 1, further comprising a device isolation layer between the fifth doping region and the third doping region and between the fifth doping region and the fourth doping regions.

### Claim 13 (depends on 1)

The electrostatic discharge protection device of claim 1, further comprising a gate electrode electrically isolated from the first conductivity type well on the first conductivity type well adjacent to an interface between the first and second conductivity type wells.

### Claim 14

An electrostatic discharge protection device comprising:
a semiconductor device including a first electrode, a second electrode and a gate electrode;
a capacitor connected between the second electrode and the gate electrode; and
a resistor connected between the gate electrode and the first electrode,
wherein the semiconductor device comprises:
a first conductivity type well;
a second conductivity type well in contact with the first conductivity type well;
first and second doping regions formed in the first conductivity type well, connected in common to form the first electrode and having different conductivity types from each other;
third and fourth doping regions formed in the second conductivity type well, connected in common to form the second electrode and having different conductivity types from each other;
a fifth doping region in the second conductivity type well between the first and second doping regions and the third and fourth doping regions; and
a conductive material electrically isolated from the first conductivity type well on the first conductivity type well adjacent to an interface between the first and second conductivity type wells to form the gate electrode.

### Claim 15 (depends on 14)

The electrostatic discharge protection device of claim 14, wherein the second electrode is connected to a pad for protecting an electrostatic discharge and the first electrode is connected to a pad for leaking the electrostatic discharge.

### Claim 16

An electrostatic discharge circuit, comprising:
a lateral bipolar junction transistor;
a vertical bipolar junction transistor; and
a doping region to disrupt current flow and to thereby increase the holding voltage of the electrostatic discharge circuit.

### Claim 17 (depends on 16)

A semiconductor device including the electrostatic discharge circuit of claim 16, comprising:
a semiconductor device including a first electrode, a second electrode and a gate electrode;
a capacitor connected between the second electrode and the gate electrode; and
a resistor connected between the gate electrode and the first electrode, the electrostatic discharge circuit of claim 16 connected between the first and second electrodes.

### Claim 18 (depends on 17)

An electronic system including the semiconductor device of claim 17, the system including:
a display driver;
a display panel; and
the semiconductor device of claim 17 connected to suppress electrostatic discharge in the display driver.

### Claim 19 (depends on 18)

An electronic system including the electronic system of claim 18, the system including:
a processor;
a display;
storage;
memory;
and the electronic system of claim 18.

### Claim 20 (depends on 19)

The electronic system of claim 19, wherein the system is a cellular telephone.