# US 2014/0151742 A1 · Glass sealing with transparent materials having transient absorption properties > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0151742 A1 - Document ID: US20140151742A1 - Status: Published application - Kind: A1 - Application number: 13/841,391 - Filed: 2013-03-15 - Published: 2014-06-05 - Earliest claimed: 2012-11-30 - Assignees: Corning Incorporated - Applicants: Corning Incorporated - Inventors: Stephan Lvovich Logunov; Mark Alejandro Quesada - Web page: https://patentgrep.com/patent/US20140151742A1 ## CPC - C03C 27/06: Joining glass to glass by processes other than fusing (fusing C03B23/20; units for use as elements for closing wall or like openings and comprising two or more parallel glass panes in spaced relationship, the panes being permanently secured together E06B3/66) - B29C 65/1635: {at least passing through one of the parts to be joined, i.e. laser transmission welding} - C03C 3/247: containing fluorine and phosphorus - C03C 4/085: {for ultraviolet absorbing glass} - C03C 8/24: Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders - H10H 20/8506: {Containers} - B29C 65/1638: {focusing the laser beam on the interface} - C08K 2003/023: {Silicon} - H01S 5/0216: {using an intermediate compound, e.g. a glue or solder} - H10F 19/80: Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells - H10K 50/8426: {Peripheral sealing arrangements, e.g. adhesives, sealants} - H10P 14/6538: {by exposure to UV light} - C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS - B29C: SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING (making preforms B29B11/00; making laminated products by combining previously unconnected layers which become one product whose layers will remain together B32B37/00 - B32B41/00) - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09) - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Transparent glass-to-glass hermetic seals are formed by providing a low melting temperature sealing glass along a sealing interface between two glass substrates and irradiating the interface with laser radiation. Absorption by the sealing glass and induced transient absorption by the glass substrates along the sealing interface causes localized heating and melting of both the sealing glass layer and the substrate materials, which results in the formation of a glass-to-glass weld. Due to the transient absorption by the substrate material, the sealed region is transparent upon cooling. ## Claims ### Claim 1 A method of protecting a workpiece comprising: forming a low Tg glass sealing layer over a major surface of a first glass substrate; arranging a workpiece to be protected between the first substrate and a second substrate where the sealing layer is in contact with the second substrate; and locally heating the glass sealing layer and the glass substrates with laser radiation to melt the sealing layer and the glass substrates to form a glass seal between the substrates. ### Claim 2 (depends on 1) The method according to claim 1, wherein the laser radiation is translated to define a sealing interface. ### Claim 3 (depends on 1) The method according to claim 1, wherein the laser radiation comprises UV radiation. ### Claim 4 (depends on 1) The method according to claim 1, wherein a pulse-width of the laser radiation is from 1 to 10 nanoseconds and a repetition rate of the laser radiation is at least 1 kHz. ### Claim 5 (depends on 1) The method according to claim 1, wherein the low Tg glass comprises: 20-100 mol % SnO; 0-50 mol % SnF2; and 0-30 mol % P2O5 or B2O3. ### Claim 6 (depends on 1) The method according to claim 1, wherein a thickness of the low Tg glass sealing layer ranges from about100 nm to 10 microns. ### Claim 7 (depends on 1) The method according to claim 1, wherein absorption of the laser radiation by the low Tg glass at room temperature is at least 15%. ### Claim 8 (depends on 1) The method according to claim 1, wherein the first glass substrate comprises a display glass. ### Claim 9 (depends on 1) The method according to claim 1, wherein the first and second glass substrates comprise a display glass. ### Claim 10 (depends on 1) The method according to claim 1, wherein absorption of the laser radiation by the glass substrates at room temperature is less than 15% and absorption of the laser radiation by the glass substrates is greater than 15% at glass substrate temperatures greater than 400° C. ### Claim 11 (depends on 1) The method according to claim 1, wherein the glass substrates are heated by thermal conduction. ### Claim 12 (depends on 1) The method according to claim 1, wherein the workpiece comprises quantum dots. ### Claim 13 (depends on 1) The method according to claim 1, wherein the workpiece comprises a display. ### Claim 14 A method of sealing a device comprising the steps of: forming a sealing layer over a surface of a first substrate; arranging a device to be sealed between the first substrate and a second substrate where the sealing layer is in contact with the second substrate to thereby form an interface between the first substrate, sealing layer and second substrate; locally heating the interface using laser radiation to cause a local increase in temperature at the interface and to melt the sealing layer at the interface; altering absorption characteristics of portions of the first substrate and second substrate adjacent the interface as a function of the local increase in temperature; melting the portions of the first substrate and second substrate as a function of the altered absorption characteristics; and sealing the device between the first and second substrates by the melted sealing layer and melted portions of the first and second substrates. ### Claim 15 (depends on 14) The method according to claim 14, wherein the sealing layer comprises: 20-100 mol % SnO; 0-50 mol % SnF2; and 0-30 mol % P2O5 or B2O3. ### Claim 16 (depends on 14) The method according to claim 14, wherein a thickness of the sealing layer ranges from about 100 nm to about 10 microns. ### Claim 17 (depends on 14) The method according to claim 14, wherein the device comprises quantum dots, a display, a light emitting diode, or an organic light emitting diode. ### Claim 18 (depends on 14) The method according to claim 14, wherein the first and second substrates have different coefficients of thermal expansion. ### Claim 19 A sealed device comprising: a glass film formed over a surface of a first substrate; and a device protected between the first substrate and a second substrate wherein the glass film is in contact with the second substrate, wherein the device is hermetically sealed between the first and second substrates as a function of the composition of impurities in the first or second substrates and as a function of the composition of the glass film though a local heating of the glass film with laser radiation having a predetermined wavelength. ### Claim 20 (depends on 19) The device of claim 19, wherein the composition of the glass film comprises: 20-100 mol % SnO; 0-50 mol % SnF2; and 0-30 mol % P2O5 or B2O3. ### Claim 21 (depends on 19) The device of claim 19, wherein the impurities in the first or second substrates is selected from the group consisting of As, Fe, Ga, K, Mn, Na, P, Sb, Ti, Zn, Sn and combinations thereof. ### Claim 22 (depends on 19) The device of claim 19, wherein the first and second substrates have different lateral dimensions, different CTEs, different thicknesses, or combinations thereof. ### Claim 23 (depends on 19) The device of claim 19, wherein one of the first and second substrates is glass. ### Claim 24 (depends on 23) The device of claim 23, wherein the other of the first and second substrates is a ceramic or metal. ### Claim 25 (depends on 19) The device of claim 19, wherein a thickness of the glass film ranges from about 100 nm to 10 microns. ### Claim 26 (depends on 19) The device of claim 19, wherein the first or second substrate comprises a display glass. ### Claim 27 (depends on 19) The device of claim 19, wherein the device is selected from the group consisting of a light emitting diode, an organic light emitting diode, a quantum dot, and combinations thereof. ### Claim 28 (depends on 19) The device of claim 19, wherein the local heating of the glass film is reduced as a function of temperature induced absorption of the glass film, the first substrate, or the second substrate.