# US 2014/0151710 A1 · Stacked Gate Structure, Metal-Oxide-Semiconductor Including the Same, and Method for Manufacturing the Stacked Gate Structure

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- Number: US 2014/0151710 A1
- Document ID: US20140151710A1
- Status: Published application
- Kind: A1
- Application number: 13/789,690
- Filed: 2013-03-08
- Published: 2014-06-05
- Earliest claimed: 2012-12-03
- Assignees: National Chiao Tung University
- Applicants: National Chiao Tung University
- Inventors: Yueh-Chin LIN; Edward Yi CHANG; Ting-Wei CHUANG
- Web page: https://patentgrep.com/patent/US20140151710A1

## CPC

- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 64/0134: {with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor}
- H10D 64/01342: {by deposition, e.g. evaporation, ALD or laser deposition (H10D64/01344 takes precedence)}
- H10D 64/685: {being perpendicular to the channel plane}
- H10D 64/691: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The invention provides a stacked gate structure and metal-oxide-semiconductor including the same, and method for manufacturing the stacked gate structure. The stacked gate structure comprises a substrate, a semiconductor layer positioned on the substrate, a gate dielectric positioned on the semiconductor layer, and a gate electrode layer positioned on the gate dielectric, which the gate dielectric comprises a composite oxide layer composed of lanthanum oxide (La2O3) and hafnium oxide (HfO2).

## Claims

### Claim 1

A stacked gate structure of a transistor, comprising:
a substrate;
a semiconductor layer positioned on the substrate;
a gate dielectric layer positioned on the semiconductor layer, wherein the gate dielectric layer comprises a composite oxide layer composed of lanthanum oxide (La2O3) and hafnium oxide (HfO2); and
a gate electrode layer positioned on the gate dielectric layer.

### Claim 2 (depends on 1)

The stacked gate structure of claim 1, wherein the semiconductor layer is a III-V semiconductor.

### Claim 3 (depends on 1)

The stacked gate structure of claim 1, wherein the material of the semiconductor layer comprises Indium gallium arsenide (InGaAs), indium arsenide (InAs), indium aluminum arsenide (InAlAs), indium phosphide (InP), gallium arsenide (GaAs), indium antimonide (InSb), indium gallium antimonide (InGaSb), gallium nitride (GaN) or aluminum gallium arsenide (AlGaAs).

### Claim 4 (depends on 1)

The stacked gate structure of claim 1, wherein the dielectric constant of the gate dielectric layer is greater than 27.

### Claim 5 (depends on 1)

The stacked gate structure of claim 1, wherein the thickness of the gate dielectric layer is in a range of 4 nm to 15 nm.

### Claim 6 (depends on 1)

The stacked gate structure of claim 1, wherein the thickness of the gate dielectric layer is in a range of 6 nm to 12 nm.

### Claim 7 (depends on 1)

The stacked gate structure of claim 1, wherein the material of the gate electrode layer is selected from the group consisting of nickel (Ni), gold (Au), titanium (Ti), platinum (Pt), copper (Cu), aluminum (Al), tantalum nitride (TaN), and a combination thereof.

### Claim 8

A method for manufacturing a stacked gate structure of a transistor, comprising the steps of:
providing a semiconductor layer having a first surface and a second surface;
forming a plurality of hafnium oxide layers and lanthanum oxide layers on the first surface of the semiconductor layer;
conducting rapid thermal annealing of the hafnium oxide layers and lanthanum oxide layers to form a gate dielectric layer having a composite oxide layer;
forming a gate electrode layer on the gate dielectric layer;
forming an ohmic contact layer in contact with the second surface of the semiconductor; and
forming a back-metal layer in contact with the ohmic contact layer, but not with the semiconductor layer.

### Claim 9 (depends on 8)

The method of claim 8, wherein the hafnium oxide layers and lanthanum oxide layers are alternatively stacked on the first surface of the semiconductor.

### Claim 10 (depends on 8)

The method of claim 8, wherein the thickness of the hafnium oxide layers is in a range of 0.5 nm to 2.0 nm.

### Claim 11 (depends on 8)

The method of claim 8, wherein the thickness of the hafnium oxide layers is in a range of 0.8 nm to 1.5 nm.

### Claim 12 (depends on 8)

The method of claim 8, wherein the thickness of the lanthanum oxide layers is in a range of 0.5 nm to 2.0 nm.

### Claim 13 (depends on 8)

The method of claim 8, wherein the thickness of the lanthanum oxide layers is in a range of 0.8 nm to 1.5 nm.