# US 2014/0151708 A1 · Thin film transistor, display device and method of manufacturing the same

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- Number: US 2014/0151708 A1
- Document ID: US20140151708A1
- Status: Published application
- Kind: A1
- Application number: 14/011,920
- Filed: 2013-08-28
- Published: 2014-06-05
- Earliest claimed: 2012-12-03
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: Seung Joon Jeon; Ki Sul Cho; Seong Moh Seo
- Web page: https://patentgrep.com/patent/US20140151708A1

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6723: {having light shields}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A thin film transistor and a method of manufacturing the same, and a display device and a method of manufacturing the same are disclosed, in which the thin film transistor substrate comprises an active layer formed on a substrate; a gate electrode controlling electron transfer within the active layer; a source electrode connected with one end area of the active layer; a drain electrode connected with the other end area of the active layer; and a light-shielding layer formed under the active layer to shield light from entering the active layer.

## Claims

### Claim 1

A thin film transistor substrate comprising:
an active layer formed on a substrate;
a gate electrode controlling electron transfer within the active layer;
a source electrode connected with one end area of the active layer;
a drain electrode connected with the other end area of the active layer; and
a light-shielding layer formed under the active layer to shield light from entering the active layer.

### Claim 2 (depends on 1)

The thin film transistor substrate of claim 1, wherein the light-shielding layer is made of a semiconductor material or a black resin material.

### Claim 3 (depends on 2)

The thin film transistor substrate of claim 2, wherein the semiconductor material is made of amorphous silicon.

### Claim 4 (depends on 3)

The thin film transistor substrate of claim 3, wherein the amorphous silicon is formed at a thickness of 1000 Å to 3000 Å.

### Claim 5 (depends on 1)

The thin film transistor substrate of claim 1, wherein the light-shielding layer is in contact with the active layer.

### Claim 6 (depends on 1)

The thin film transistor substrate of claim 1, wherein a buffer layer is additionally formed between the light-shielding layer and the active layer.

### Claim 7 (depends on 1)

The thin film transistor substrate of claim 1, wherein the light-shielding layer is in contact with the gate electrode.

### Claim 8 (depends on 1)

The thin film transistor substrate of claim 1, wherein a buffer layer is additionally formed between the light-shielding layer and the gate electrode.

### Claim 9

A method of manufacturing a thin film transistor substrate, the method comprising:
forming an active layer on a substrate;
forming a gate electrode, which controls electron transfer within the active layer, on the substrate;
forming a source electrode connected with one end area of the active layer and a drain electrode connected with the other end area of the active layer; and
forming a light-shielding layer under the active layer to shield light from entering the active layer.

### Claim 10 (depends on 9)

The method of claim 9, wherein the light-shielding layer is made of a semiconductor material or a black resin material.

### Claim 11 (depends on 9)

The method of claim 9, wherein the light-shielding layer and the active layer are patterned together by one mask process.

### Claim 12 (depends on 9)

The method of claim 9, further comprising forming a buffer layer between the light-shielding layer and the active layer.

### Claim 13 (depends on 9)

The method of claim 9, wherein the light-shielding layer and the gate electrode are patterned together by one mask process.

### Claim 14 (depends on 9)

The method of claim 9, further comprising forming a buffer layer between the light-shielding layer and the gate electrode.

### Claim 15

A display device comprising a thin film transistor substrate,
the thin film transistor substrate comprising:
an active layer formed on a substrate;
a gate electrode controlling electron transfer within the active layer;
a source electrode connected with one end area of the active layer;
a drain electrode connected with the other end area of the active layer; and
a light-shielding layer formed under the active layer to shield light from entering the active layer.

### Claim 16

A method of manufacturing a display device, which comprises a method of manufacturing a thin film transistor substrate,
the method of manufacturing a thin film transistor substrate comprising:
forming an active layer on a substrate;
forming a gate electrode, which controls electron transfer within the active layer, on the substrate;
forming a source electrode connected with one end area of the active layer and a drain electrode connected with the other end area of the active layer; and
forming a light-shielding layer under the active layer to shield light from entering the active layer.