# US 2014/0151690 A1 · Semiconductor materials, transistors including the same, and electronic devices including transistors

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- Number: US 2014/0151690 A1
- Document ID: US20140151690A1
- Status: Published application
- Kind: A1
- Application number: 14/093,121
- Filed: 2013-11-29
- Published: 2014-06-05
- Earliest claimed: 2012-11-30
- Assignees: Samsung Display Co., Ltd.; Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Tae-sang KIM; Sun-jae KIM; Hyun-suk KIM; Myung-kwan RYU; Joon-seok PARK; Seok-jun SEO; Jong-baek SEON; Kyoung-seok SON
- Web page: https://patentgrep.com/patent/US20140151690A1

## CPC

- H10D 62/80: characterised by the materials
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6756: {Amorphous oxide semiconductors}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

## Claims

### Claim 1

A compound semiconductor comprising:
zinc (Zn);
nitrogen (N); and
fluorine (F).

### Claim 2 (depends on 1)

The compound semiconductor of claim 1, further comprising:
oxygen (O),
wherein the compound semiconductor includes zinc oxynitride (ZnON) containing fluorine (F).

### Claim 3 (depends on 2)

The compound semiconductor of claim 2, wherein
a composition ratio of fluorine (F) with respect to materials except for zinc (Zn) in the compound semiconductor is 3 at % or more.

### Claim 4 (depends on 1)

The compound semiconductor of claim 1, wherein the compound semiconductor includes zinc fluoronitride (ZnFN).

### Claim 5 (depends on 1)

The compound semiconductor of claim 1, wherein the compound semiconductor includes an amorphous phase.

### Claim 6 (depends on 1)

The compound semiconductor of claim 1, wherein the compound semiconductor includes a nanocrystalline phase.

### Claim 7 (depends on 1)

The compound semiconductor of claim 1, further comprising:
at least one of a Group I element, a Group II element, a Group III element, a Group IV element, a Group V element, and a Lanthanide (Ln) element.

### Claim 8 (depends on 1)

A thin film transistor (TFT) comprising:
a gate electrode;
a channel corresponding to the gate electrode, the channel including the compound semiconductor of claim 1;
a gate insulating layer between the gate electrode and the channel; and
a source electrode and a drain electrode respectively contacting two portions of the channel.

### Claim 9 (depends on 8)

The thin film transistor of claim 8, wherein
the compound semiconductor includes oxygen (O), and
the compound semiconductor include zinc oxynitride (ZnON) containing fluorine.

### Claim 10 (depends on 8)

The thin film transistor of claim 8, wherein a composition ratio of fluorine (F) in the compound semiconductor with respect to materials except for zinc (Zn) is 3 at % or more.

### Claim 11 (depends on 8)

The thin film transistor of claim 8, wherein the compound semiconductor include zinc fluoronitride (ZnFN).

### Claim 12 (depends on 8)

The thin film transistor of claim 8, wherein the compound semiconductor includes an amorphous phase.

### Claim 13 (depends on 8)

The thin film transistor of claim 8, wherein the compound semiconductor includes a nanocrystalline phase.

### Claim 14 (depends on 8)

The thin film transistor of claim 8, further comprising:
a substrate, wherein
the gate electrode is on the substrate,
the gate insulating layer is on the gate electrode,
the channel is on a region of the gate insulating layer corresponding to the gate electrode.

### Claim 15 (depends on 8)

The thin film transistor of claim 8, further comprising:
a substrate, wherein
the source and drain electrodes are on the substrate,
the channel is on the substrate between the source and drain electrodes,
the gate insulating layer is on the channel,
the gate electrode is on a region of the gate insulating layer corresponding to the channel.