# US 2014/0151683 A1 · Thin film transistor

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- Number: US 2014/0151683 A1
- Document ID: US20140151683A1
- Status: Published application
- Kind: A1
- Application number: 13/873,426
- Filed: 2013-04-30
- Published: 2014-06-05
- Earliest claimed: 2012-12-05
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Sang Ho Park; Su-Hyoung Kang; Yoon Ho Khang; Dong Jo Kim; Joon Yong Park; Sang Won Shin; Dong Hwan Shim
- Web page: https://patentgrep.com/patent/US20140151683A1

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A thin film transistor includes an oxide semiconductor, in which an oxygen defect content of the oxide semiconductor is no greater than about 0.15 based on an entire oxygen content included in the oxide semiconductor.

## Claims

### Claim 1

A thin film transistor, comprising:
an oxide semiconductor,
wherein an oxygen defect content of the oxide semiconductor is no greater than about 0.15 based on an entire oxygen content included in the oxide semiconductor.

### Claim 2 (depends on 1)

The thin film transistor of claim 1, wherein a ratio of oxygen content to the oxygen defect content in the oxide semiconductor is quantified by measuring binding energy of an 1s orbital of oxygen.

### Claim 3 (depends on 2)

The thin film transistor of claim 2, wherein the oxide semiconductor includes at least one of selected from the group consisting of zinc oxide, zinc-tin oxide, zinc-indium oxide, indium oxide, titanium oxide, indium-gallium-zinc oxide, and indium-zinc-tin oxide.

### Claim 4 (depends on 1)

The thin film transistor of claim 1, further comprising:
a substrate;
a gate electrode disposed on the substrate;
a source electrode disposed on the substrate; and
a drain electrode disposed on a same layer as that of the source electrode, and facing the source electrode,
wherein the oxide semiconductor is disposed between the gate electrode and the source electrode, or between the gate electrode and the drain electrode.

### Claim 5 (depends on 4)

The thin film transistor of claim 4, wherein the gate electrode is disposed under the oxide semiconductor, and the source electrode and the drain electrode are disposed on the oxide semiconductor.

### Claim 6 (depends on 5)

The thin film transistor of claim 5, further comprising:
an etching preventing layer covering a channel portion of the oxide semiconductor, and overlapping edges of side surfaces of the source electrode and the drain electrode facing each other.

### Claim 7 (depends on 6)

The thin film transistor of claim 6, further comprising:
an insulation layer disposed on the source electrode and the drain electrode, and covering an exposed upper surface of the etching preventing layer between the source electrode and the drain electrode.

### Claim 8 (depends on 7)

The thin film transistor of claim 7, wherein the etching preventing layer includes at least one of a silicon-based oxide or a nitride.

### Claim 9 (depends on 8)

The thin film transistor of claim 8, wherein the insulating layer includes at least one of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiONx).

### Claim 10 (depends on 4)

The thin film transistor of claim 4, wherein the gate electrode is disposed on the oxide semiconductor, and the source electrode and the drain electrode are disposed under the oxide semiconductor.

### Claim 11 (depends on 4)

The thin film transistor of claim 4, further comprising:
an etching preventing layer disposed directly on a channel portion of the oxide semiconductor, wherein a portion of the etching preventing layer is exposed by the source electrode and the drain electrode spaced apart from the source electrode, and wherein the etching preventing layer is in direct physical contact with edges of the source electrode and the drain electrode; and
a passivation layer disposed directly on the source electrode, the drain electrode and the portion of the etching preventing layer exposed by the source electrode and the drain electrode.

### Claim 12

A thin film transistor, comprising:
an oxide semiconductor,
wherein a tail state in an interface trap at a vicinity of a conduction band of the oxide semiconductor is no greater than about 1021 cm−3eV−1, and a deep state in the interface trap at the vicinity of the conduction band of the oxide semiconductor is no greater than about 1018 cm−3eV−1.

### Claim 13 (depends on 12)

The thin film transistor of claim 12, wherein the oxide semiconductor includes at least one selected from the group consisting of zinc oxide, zinc-tin oxide, zinc-indium oxide, indium oxide, titanium oxide, indium-gallium-zinc oxide, and indium-zinc-tin oxide.

### Claim 14 (depends on 12)

The thin film transistor of claim 12, further comprising:
a gate electrode;
a source electrode; and
a drain electrode disposed on a same layer as that of the source electrode, and facing the source electrode,
wherein the oxide semiconductor is disposed between the gate electrode and the source electrode, or between the gate electrode and the drain electrode.

### Claim 15 (depends on 14)

The thin film transistor of claim 14, wherein the gate electrode is disposed under the oxide semiconductor, and the source electrode and the drain electrode are disposed on the oxide semiconductor.

### Claim 16 (depends on 15)

The thin film transistor of claim 15, further comprising:
an etching preventing layer covering a channel portion of the oxide semiconductor, and overlapping edges of side surfaces of the source electrode and the drain electrode facing each other.

### Claim 17 (depends on 16)

The thin film transistor of claim 16, further comprising:
an insulation layer disposed on the source electrode and the drain electrode, and covering an exposed upper surface of the etching preventing layer between the source electrode and the drain electrode.

### Claim 18 (depends on 17)

The thin film transistor of claim 17, wherein the etching preventing layer includes at least one of a silicon-based oxide or a nitride.

### Claim 19 (depends on 14)

The thin film transistor of claim 14, wherein the gate electrode is disposed on the oxide semiconductor, and the source electrode and the drain electrode are disposed under the oxide semiconductor.

### Claim 20 (depends on 14)

The thin film transistor of claim 14, further comprising:
an etching preventing layer disposed directly on a channel portion of the oxide semiconductor, wherein a portion of the etching preventing layer is exposed by the source electrode and the drain electrode spaced apart from the source electrode, and wherein the etching preventing layer is in direct physical contact with edges of the source electrode and the drain electrode; and
a passivation layer disposed directly on the source electrode, the drain electrode and the portion of the etching preventing layer exposed by the source electrode and the drain electrode.