# US 2014/0151674 A1 · Light-emitting display device and method for manufacturing the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0151674 A1
- Document ID: US20140151674A1
- Status: Published application
- Kind: A1
- Application number: 14/173,878
- Filed: 2014-02-06
- Published: 2014-06-05
- Earliest claimed: 2010-09-13
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei Yamazaki; Kaoru Hatano
- Web page: https://patentgrep.com/patent/US20140151674A1

## CPC

- H10K 59/1213: {the pixel elements being TFTs}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT]
- H10K 59/1201: {Manufacture or treatment}
- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10K 71/80: using temporary substrates
- H10K 2102/311: {Flexible OLED}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Provided is a method to manufacture a light-emitting display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.

## Claims

### Claim 1

A light-emitting display device comprising a pixel over a flexible substrate, the pixel comprising:
a first thin film transistor comprising:
a first oxide semiconductor layer; and
a first source electrode and a first drain electrode which are electrically connected to the first oxide semiconductor layer;
a second thin film transistor comprising:
a gate electrode; and
a second source electrode and a second drain electrode with a second oxide semiconductor layer between the gate electrode and the second source electrode and between the gate electrode and the second drain electrode, wherein the second source electrode and the second drain electrode are electrically connected to the second oxide semiconductor layer; and
a light-emitting element comprising:
a first pixel electrode electrically connected to one of the second source electrode and the second drain electrode;
an organic compound layer over the first pixel electrode; and
a second pixel electrode over the organic compound layer,
wherein the gate electrode is electrically connected to one of the first source electrode and the first drain electrode, and
wherein the first pixel electrode is in direct contact with a side surface of the second oxide semiconductor layer in the pixel.

### Claim 2 (depends on 1)

The light-emitting display device according to claim 1,
wherein the second thin film transistor further comprises a gate insulating layer which is provided between the gate electrode and the second oxide semiconductor layer, and
wherein the first pixel electrode is in direct contact with a top surface of the gate insulating layer in the pixel.

### Claim 3 (depends on 1)

The light-emitting display device according to claim 1,
wherein the second thin film transistor further comprises an insulating layer over the second source electrode and the second drain electrode,
wherein the insulating layer is in contact with the second oxide semiconductor layer in a region overlapping with the gate electrode, and
wherein the electrical contact of the first pixel electrode with the one of the second source electrode and the second drain electrode is performed in a contact hole formed in the insulating layer.

### Claim 4 (depends on 1)

The light-emitting display device according to claim 1, further comprising a base layer between the flexible substrate and the first thin film transistor and between the flexible substrate and the second thin film transistor.

### Claim 5 (depends on 1)

The light-emitting display device according to claim 1, wherein the first oxide semiconductor layer and the second oxide semiconductor layer comprise an element selected from gallium and indium.

### Claim 6

A light-emitting display device comprising a pixel over a flexible substrate, the pixel comprising:
a first thin film transistor comprising:
a first oxide semiconductor layer; and
a first source electrode and a first drain electrode which are electrically connected to the first oxide semiconductor layer;
a second thin film transistor comprising:
a gate electrode; and
a second source electrode and a second drain electrode with a second oxide semiconductor layer between the gate electrode and the second source electrode and between the gate electrode and the second drain electrode, wherein the second source electrode and the second drain electrode are electrically connected to the second oxide semiconductor layer;
a light-emitting element comprising:
a first pixel electrode electrically connected to one of the second source electrode and the second drain electrode;
an organic compound layer over the first pixel electrode, and
a second pixel electrode over the organic compound layer; and
a capacitor comprising:
a capacitor wiring electrically connected to the gate electrode; and
a dielectric layer over the capacitor wiring,
wherein the gate electrode is electrically connected to one of the first source electrode and the first drain electrode, and
wherein the first pixel electrode is in direct contact with a side surface of the second oxide semiconductor layer in the pixel.

### Claim 7 (depends on 6)

The light-emitting display device according to claim 6,
wherein the second thin film transistor further comprises a gate insulating layer which is provided between the gate electrode and the second oxide semiconductor layer, and
wherein the first pixel electrode is in direct contact with a top surface of the gate insulating layer in the pixel.

### Claim 8 (depends on 6)

The light-emitting display device according to claim 6,
wherein the second thin film transistor further comprises an insulating layer over the second source electrode and the second drain electrode,
wherein the insulating layer is in contact with the second oxide semiconductor layer in a region overlapping with the gate electrode, and
wherein the electrical contact of the first pixel electrode with the one of the second source electrode and the second drain electrode is performed in a contact hole formed in the insulating layer.

### Claim 9 (depends on 6)

The light-emitting display device according to claim 6, further comprising a base layer between the flexible substrate and the first thin film transistor and between the flexible substrate and the second thin film transistor.

### Claim 10 (depends on 6)

The light-emitting display device according to claim 6, wherein the first oxide semiconductor layer and the second oxide semiconductor layer comprise an element selected from gallium and indium.