# US 2014/0151673 A1 · Organic electroluminescence generating devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0151673 A1 - Document ID: US20140151673A1 - Status: Published application - Kind: A1 - Application number: 14/173,684 - Filed: 2014-02-05 - Published: 2014-06-05 - Earliest claimed: 2003-03-28 - Assignees: E.T.C. S.R.L. - Inventors: Michele MUCCINI; Paul HEREMANS; Johan Lieven Hendrik REYNAERT; Raymond ZIESSEL; Aline HEPP; Roland SCHMECHEL; Heinz VON SEGGERN; Holger HEIL - Web page: https://patentgrep.com/patent/US20140151673A1 ## CPC - H10K 50/30: Organic light-emitting transistors - H10K 50/171: {Electron injection layers} - H10K 50/852: comprising a resonant cavity structure, e.g. Bragg reflector pair - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract An electroluminescence generating device comprising a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole channel and positioned on top of within said channel layer, said hole electrode being able to inject holes into said channel; a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode. ## Claims ### Claim at position 1 -28. (canceled) ### Claim 29 An electroluminescence generating device comprising: a channel comprising at least one layer of an organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron injector electrode, said electron injector electrode being in contact with said channel and positioned on top of a first side of said channel or within said channel, said electron injector electrode being able to inject electrons in said channel; a hole injector electrode, said hole injector electrode being spaced apart from said electron injector electrode, said hole injector electrode being in contact with said channel and positioned on top of a first side of said channel or within said channel, said hole injector electrode being able to inject holes in said channel, each of said electron injector electrode and said hole injector electrode being positioned in an essentially horizontal plane along said channel; and a control electrode positioned on said first side or on a second side of said channel, said control electrode being suitable for controlling the charge injection, the current flow and the charge recombination between the electron injector electrode and the hole injector electrode, said electroluminescence generating device being able to emit light by applying an electrical potential difference between said electron injector electrode and said hole injector electrode, wherein said electron injector electrode and said hole injector electrode have a different material composition. ### Claim 30 (depends on 29) The device according to claim 29, further comprising a dielectric layer between said channel and said control electrode. ### Claim 31 (depends on 30) The device according to claim 30, wherein said dielectric layer comprises at least one material selected from the group consisting of silicon oxide, alumina, polyimide and polymethylmethacrylate. ### Claim 32 (depends on 29) The device according to claim 29, wherein said electron injector electrode comprises one or more elements selected from the group consisting of Au, Ca, Mg, Al, In, and Perovskite Manganites. ### Claim 33 (depends on 29) The device according to claim 29, wherein said hole injector electrode comprises at least one material selected from the group consisting of Au, indium tin oxide, Cr, Cu, Fe, Ag, poly(3,4-ethylendioxythiophene) combined with poly(styrene sulfonate), and Perovskite Manganites. ### Claim 34 (depends on 29) The device according to claim 29, wherein said channel comprises at least one material selected from the group consisting of small molecule materials, polymers and metal complexes. ### Claim 35 (depends on 34) The device according to claim 34, wherein said channel comprises at least one material selected from the group consisting of tetracene, pentacene, perylenes, terthiophene, tetrathiophene, quinquethiophene, sexithiophene, bora-diazaindacene, polyphenylenevinylene, polyfluorene, polythiophene and porphyrins. ### Claim 36 (depends on 29) The device according to claim 29, wherein said semiconductor organic material is a polycrystalline semiconductor organic material having a crystal grain size and said hole injector electrode and said electron injector electrode are spaced apart at a distance smaller than said crystal grain size. ### Claim 37 (depends on 29) The device according to claim 29, wherein said hole injector electrode and said electron injector electrode are spaced apart at a distance between 5 nm and 5 microns. ### Claim 38 (depends on 29) The device according to claim 29, wherein said electron injector electrode and said hole injector electrode have digitated structures comprising a regular repetition of a basic finger structure, and are positioned such that said basic finger structures of said basic finger structures of respectively hole and electron injector electrodes are alternating each other, and is characterized by two in-plane distances P and R between the basic finger structures. ### Claim 39 (depends on 38) The device according to claim 38 wherein said P and R are equal. ### Claim 40 (depends on 29) The device according to claim 29, wherein said control electrode is an injection control electrode, said injection control electrode being positioned on said second side of said channel and being suitable to facilitate the injection of charge carriers into said channel upon the application of an electrical potential difference between said control electrode and said hole injector electrode or an electron injector electrode. ### Claim 41 (depends on 29) The device according to claim 29, wherein said control electrode is a current control electrode, said current control electrode being positioned on said second side of said channel whereby being suitable for controlling the current of at least one type of charge carriers upon the application of an electrical potential difference between said control electrode and said electron and/or hole injector electrode. ### Claim 42 (depends on 29) The device according to claim 29, wherein said channel comprises three layers of organic semiconductors. ### Claim 43 (depends on 42) The device according to claim 42, wherein the three layers of organic semiconductors are: a first electron injection and transport layer; a second recombination organic semiconductor layer; and a third hole injection and transport organic semiconductor layer ### Claim 44 (depends on 43) The device according to claim 43, wherein said three layers of organic semiconductors are coplanar layers of organic semiconductors. ### Claim 45 (depends on 29) The device according to claim 29, where said at least one layer of organic semiconductor material are a plurality of coplanar layers of organic semiconductor material. ### Claim 46 (depends on 29) The device according to claim 29, further comprising optical confinement and/or waveguiding layers on said first and/or second side of said channel. ### Claim 47 (depends on 46) The device according to claim 46, wherein the optical confinement and/or waveguiding layers have a lower refractive index than the refractive index of the channel. ### Claim 48 (depends on 29) The device according to claim 29, further comprising optical resonating structures or cavities on said first and/or second side of said channel. ### Claim 49 (depends on 29) The device according to claim 29, further comprising a flexible or rigid substrate. ### Claim 50 (depends on 29) The device according to claim 29, wherein the control electrode comprises at least two control electrodes. ### Claim 51 (depends on 29) The device according to claim 29, wherein all the injector electrodes are on the same first side of the channel opposite to the control electrode on the second side of the channel. ### Claim 52 (depends on 29) The device according to claim 29, wherein said electron electrode comprises one or more elements selected from the group consisting of Mg, In, and Perovskite Manganites. ### Claim 53 (depends on 29) The device according to claim 29, wherein said hole electrode comprises at least one material selected from the group consisting of indium tin oxide, Fe, Ag, poly(3,4-ethylendioxythiophene) combined with poly(styrene sulfonate), and Perovskite Manganites. ### Claim 54 (depends on 29) The device according to claim 29, further comprising one or more materials forming a staircase of electronic levels between a) an energy level of the electron injection electrode and/or the hole injection electrode and b) an energy level required for said charge injection into the channel. ### Claim 55 (depends on 54) The device according to claim 54, wherein said one or more materials are in form of layers.