# US 2014/0151642 A1 · 3d rfics with ultra-thin semiconductor materials

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- Number: US 2014/0151642 A1
- Document ID: US20140151642A1
- Status: Published application
- Kind: A1
- Application number: 13/968,026
- Filed: 2013-08-15
- Published: 2014-06-05
- Earliest claimed: 2012-12-05
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: SHU-JEN HAN; ALBERTO VALDES GARCIA
- Web page: https://patentgrep.com/patent/US20140151642A1

## CPC

- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D 30/01: Manufacture or treatment
- H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D 62/8303: {Diamond}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 88/01: {Manufacture or treatment}
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- H10D 62/882: {Graphene}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Three-dimensional integrated circuits include an active layer having one or more active components formed with carbon-based channel material; a passive layer monolithically formed with the active layer, having one or more sub-layers and each sub-layer having one or more passive components, where the passive components have monolithically formed vertical interconnects to components on other layers; and a surface layer monolithically formed with the passive layer, including one or more surface components connected to one or more of the passive components through monolithically formed vias.

## Claims

### Claim 1

A three-dimensional integrated circuit, comprising:
an active layer comprising one or more active components formed with carbon-based channel material;
a passive layer monolithically formed with the active layer, comprising one or more sub-layers, each sub-layer having one or more passive components, wherein the passive components have monolithically formed vertical interconnects to components on other layers; and
a surface layer monolithically formed with the passive layer, comprising one or more surface components connected to one or more of the passive components through monolithically formed vias.

### Claim 2 (depends on 1)

The three-dimensional integrated circuit of claim 1, wherein the one or more surface components comprise an antenna.

### Claim 3 (depends on 1)

The three-dimensional integrated circuit of claim 1, wherein the carbon-based channel material is formed from graphene.

### Claim 4 (depends on 1)

The three-dimensional integrated circuit of claim 1, wherein the carbon-based channel material is formed from carbon nanotubes.

### Claim 5 (depends on 1)

The three-dimensional integrated circuit of claim 1, wherein the circuit does not include through-silicon vias.

### Claim 6

A three-dimensional radio frequency integrated circuit, comprising:
an active layer comprising one or more active components formed with carbon-based channel material;
a passive layer monolithically formed with the active layer, comprising one or more sub-layers, each sub-layer having one or more passive components, wherein the passive components have monolithically formed vertical interconnects to components on other layers and wherein the passive layer does not include through-silicon vias; and
a surface layer monolithically formed with the passive layer, comprising an antenna connected to one or more of the passive components through monolithically formed vias.