# US 2014/0151633 A1 · Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

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- Number: US 2014/0151633 A1
- Document ID: US20140151633A1
- Status: Published application
- Kind: A1
- Application number: 14/173,287
- Filed: 2014-02-05
- Published: 2014-06-05
- Earliest claimed: 2010-05-18
- Assignees: Seoul Semiconductor Co., Ltd.
- Applicants: Seoul Semiconductor Co., Ltd.
- Inventors: Jung Hwa JUNG; Bang Hyun KIM
- Web page: https://patentgrep.com/patent/US20140151633A1

## CPC

- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/851: Wavelength conversion means
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10W 90/00: Package configurations
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An exemplary embodiment of the present invention discloses a light-emitting diode (LED) chip including a semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first electrode disposed on the semiconductor stacked structure, a wavelength converting layer disposed on the semiconductor stacked structure, and a transparent resin disposed on the wavelength converting layer.

## Claims

### Claim 1

A light-emitting diode (LED) chip, comprising:
a semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a first electrode disposed on the semiconductor stacked structure;
a wavelength converting layer disposed on the semiconductor stacked structure; and
a transparent resin disposed on the wavelength converting layer.

### Claim 2 (depends on 1)

The LED chip of claim 1, further comprising a first spacer layer disposed between the semiconductor stacked structure and the wavelength converting layer.

### Claim 3 (depends on 2)

The LED chip of claim 2, wherein the transparent resin has a hardness higher than a hardness of the first spacer layer.

### Claim 4 (depends on 1)

The LED chip of claim 1, wherein the transparent resin is a material selected from the group consisting of TiO2, SiO2, and Y2O3.

### Claim 5 (depends on 2)

The LED chip of claim 2, further comprising a second spacer layer disposed between the first spacer layer and the semiconductor stacked structure.

### Claim 6 (depends on 5)

The LED chip of claim 5, further comprising a transparent conductive layer disposed between the second spacer layer and the semiconductor stacked structure.

### Claim 7 (depends on 1)

The LED chip of claim 1, further comprising a distributed Bragg reflector (DBR), wherein the substrate is disposed between the semiconductor stacked structure and the DBR.

### Claim 8 (depends on 7)

The LED chip of claim 7, further comprising a metal layer, wherein the DBR is disposed between the substrate and the metal layer.

### Claim 9 (depends on 1)

The LED chip of claim 1, further comprising:
a first electrode electrically connected with the first conductivity-type semiconductor layer; and
a second electrode electrically connected with the second conductivity-type semiconductor layer,
wherein a top surface of the first electrode is positioned at a lower height than a top surface of the second electrode.

### Claim 10 (depends on 1)

The LED chip of claim 1, further comprising:
a first electrode electrically connected with the first conductivity-type semiconductor layer; and
a second electrode electrically connected with the second conductivity-type semiconductor layer,
wherein a top surface of the first electrode is positioned at the same height as a top surface of the second electrode.

### Claim 11

A light-emitting diode (LED) package, comprising:
a mount; and
an LED chip disposed on the mount, wherein the LED chip comprises:
a semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a first electrode disposed on the semiconductor stacked structure;
a wavelength converting layer disposed on the semiconductor stacked structure; and
a transparent resin disposed on the wavelength converting layer.

### Claim 12 (depends on 11)

The LED package of claim 11, wherein the mount comprises a printed circuit board, a lead frame, or a ceramic substrate.

### Claim 13 (depends on 12)

The LED package of claim 12, wherein the mount further comprises lead terminals, wherein the lead terminals are electrically connected with the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer.

### Claim 14 (depends on 11)

The LED package of claim 11, wherein the transparent resin is a material selected from the group consisting of TiO2, SiO2, and Y2O3.