# US 2014/0151632 A1 · Gan-based vertical structure led applying graphene film current expansion layer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0151632 A1 - Document ID: US20140151632A1 - Status: Published application - Kind: A1 - Application number: 14/123,439 - Filed: 2012-03-13 - Published: 2014-06-05 - Earliest claimed: 2011-06-02 - Assignees: Institute of Semiconductors, Chinese Academy of Sciences - Inventors: Jinmin Li; Liancheng Wang; Yiyun Zhang; Xiaoyan Yi; Guohong Wang; Junxi Wang - Web page: https://patentgrep.com/patent/US20140151632A1 ## CPC - H10H 20/81: Bodies - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/832: characterised by their material - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract The present invention discloses A graphene film electrical current spreading layer applied GaN-based LED in vertical. structure, comprising: a p-type metal electrode including a metal support substrate and a metal reflective mirror formed on the metal support substrate; a hole injecting layer formed on the metal reflective mirror of the p-type metal electrode; an electron blocking layer formed on the hole injecting layer; a lighting layer formed on the electron blocking layer; an electron limiting layer formed on the lighting layer; an electron injecting layer formed on the electron limiting layer; an electrical current spreading layer formed on the electron injecting layer; two n-type metal electrodes formed on the electrical spreading layer and covering a part of the electrical current spreading layer. ## Claims ### Claim 1 A graphene film electrical current spreading layer applied GaN-based LED in vertical structure, comprising: a p-type metal electrode including a metal support substrate and a metal reflective mirror formed on the metal support substrate; a hole injecting layer formed on the metal reflective mirror of the p-type metal electrode; an electron blocking layer formed on the hole injecting layer; a lighting layer formed on the electron blocking layer; an electron limiting layer formed on the lighting layer; an electron injecting layer formed on the electron limiting layer; an electrical current spreading layer formed on the electron injecting layer; two n-type metal electrodes formed on the electrical spreading layer and covering a part of the electrical current spreading layer. ### Claim 2 (depends on 1) The graphene film electrical current spreading layer applied GaN-based LED in vertical structure according to claim 1, characterized in that, the material of the metal support substrate of the p-type metal electrode is selected from the group consisting of: copper, nickel, copper-nickel alloy, copper-tungsten alloy and nickel-cobalt alloy. ### Claim 3 (depends on 1) The graphene film electrical current spreading layer applied GaN-based LED in vertical structure according to claim 1, characterized in that, the material of the metal reflective mirror of the p-type metal electrode is selected from the group consisting of nickel/silver/platinum/gold multiple layers structure, nickel/silver/gold multiple layers structure, nickel/silver/nickel/gold multiple layers structure, titanium/aluminium/titanium/gold multiple layers structure, titanium/silver/titanium/gold multiple layers structure, aluminium/silver/gold multiple layers structure and aluminium/titanium/gold multiple layers structure. ### Claim 4 (depends on 1) The graphene film electrical current spreading layer applied GaN-based LED in vertical structure according to claim 1, characterized in that, the hole injecting layer is made from p-type GaN material doped by magnesium. ### Claim 5 (depends on 1) The graphene film electrical current spreading layer applied GaN-based LED in vertical structure according to claim 1, characterized in that, the electron blocking layer is made of material selected from AlxGa1-xN, in which x is in the range of 0≦x≦1. ### Claim 6 (depends on 1) The graphene film electrical current spreading layer applied GaN-based LED in vertical structure according to claim 1, characterized in that, the lighting layer includes m InGaN quantum well and m+1 GaN quantum barrier, each InGaN quantum well being respectively associated with a GaN quantum barrier at its upper and lower sides thereof, wherein m is no less than 1. ### Claim 7 (depends on 1) The graphene film electrical current spreading layer applied GaN-based LED in vertical structure according to claim 1, characterized in that, the electron limiting layer is made of material selected from AlzGa1-zN with z in the range of 0≦z≦1. ### Claim 8 (depends on 1) The graphene film electrical current spreading layer applied GaN-based LED in vertical structure according to claim 1, characterized in that, the electron injecting layer is made of n-type GaN material doped by silicon. ### Claim 9 (depends on 1) The graphene film electrical current spreading layer applied GaN-based LED in vertical structure according to claim 1, characterized in that, the electrical current spreading layer is made of single or multiple layer grapheme film material. ### Claim 10 (depends on 1) The graphene film electrical current spreading layer applied GaN-based LED in vertical structure according to claim 1, characterized in that, the n-type metal electrodes are made of material selected from the group consisting of nickel/gold multiple layers structure, nickel/silver/gold multiple layers structure, nickel/silver/nickel/gold multiple layers structure, nickel/silver/platinum/gold multiple layers structure, titanium/gold multiple layers structure, titanium/silver/gold multiple layers structure, titanium/aluminium/titanium/gold multiple layers structure, titanium/silver/titanium/gold multiple layers structure, aluminium/titanium/gold multiple layers structure, chromium/platinum/gold structure and chromium/silver/gold structure.