# US 2014/0151631 A1 · Asymmetric bottom contacted device

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- Number: US 2014/0151631 A1
- Document ID: US20140151631A1
- Status: Published application
- Kind: A1
- Application number: 14/084,959
- Filed: 2013-11-20
- Published: 2014-06-05
- Earliest claimed: 2012-11-20
- Assignees: The Provost, Fellows, Foundation Scholars, and the Other Members of Board
- Applicants: The Provost, Fellows, Foundation Scholars, And The Other Members Of Board, Of
- Inventors: Georg Duesberg; Hye-Young Kim
- Web page: https://patentgrep.com/patent/US20140151631A1

## CPC

- G01N 27/129: {Diode type sensors, e.g. gas sensitive Schottky diodes (capacitor type sensors G01N27/227; field-effect transistor type sensors G01N27/414)}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

The invention provides a Bottom Contacted 2D-layer Device (BCD) for the determination of graphene doping and chemical sensing. The device can be made by transfer of high quality CVD grown graphene films onto n- or p-doped silicon substrates yielding Schottky barrier diodes. Exposure to liquids and gases change the charge carrier density in the graphene and as a result the electrical transport of the device is modulated. The changes can be easily detected and interpreted in the doping power of the adsorbent. This principle allows one to create a new type of chemical sensor platform exploiting the monolayer nature of graphene or other carbon material. The device benefits from facile fabrication and the result is a robust device which can investigate surface chemistry on monolayer materials.

## Claims

### Claim 1

A device comprising:
an electrode;
a 2D material layer in lateral contact with the electrode, wherein the charge transport can be measured vertically.

### Claim 2 (depends on 1)

The device of claim 1, wherein the material layer comprises graphene and the electrode comprises semiconductor material.

### Claim 3 (depends on 1)

The device of claim 1, wherein the electrode comprises a metal or carbon and the 2D material comprises a semiconductor material.

### Claim 4 (depends on 1)

The device of claim of claim 1, wherein the electrode comprises a transition metal dichalgogenide (MoS2, WS2).

### Claim 5 (depends on 1)

The device of claim 1, where adsorption events on the 2D material can provide a sensor function.

### Claim 6 (depends on 1)

The device of claim 1, wherein on exposure of the layer of carbon to liquid and gas changes the charge carrier density in the carbon such that the electrical transport of the device is modulated.

### Claim 7 (depends on 6)

The device of claim 6, wherein the changes in the charge carrier density can be detected and interpreted in the doping power of the adsorbent to provide said sensor function.

### Claim 8 (depends on 1)

The device of claim 1, comprising a measurement module to determine the change in the work function and doping of the layer of carbon upon exposure to a gas, or a liquid or solid.

### Claim 9 (depends on 1)

The device of claim 1, wherein the sensor function can identify or sense at least one of: anisole, benzene, chlorobenzene, nitrobenzene, glucose, carbon dioxide, H2S or gaseous ammonia.

### Claim 10 (depends on 1)

The device of claim 1, wherein a sensor function comprises the change of charge carriers in the carbon layer due to the charge injection through an ohmic metal contact and a Schottky contact applied horizontally over an area of the 2D layer.

### Claim 11 (depends on 1)

The device of claim 1, wherein a sensor function enables direct label-free detection of receptor ligand interaction.

### Claim 12 (depends on 1)

The device of claim 1, wherein a sensor function enables the direct growth detection of cells residing on top of a buffer layer.

### Claim 13 (depends on 1)

The device of claim 1, wherein the layer of material comprises a mediation layer.

### Claim 14 (depends on 1)

The device of claim 1, wherein the layer of material comprises a dielectric or polymer mediation layer.

### Claim 15 (depends on 1)

The device of claim 1, wherein the layer of material comprises a polymer holding electrolytes mediation layer.

### Claim 16 (depends on 1)

The device of claim 1, wherein the layer of material comprises a mediation layer functionalised with at least one receptor to enable a bio-molecule sensor function.

### Claim 17 (depends on 1)

The device of claim 1, wherein the layer of material comprises a mediation layer filled with nutrition media for cells to enable the sensor function via changes of the composition of the liquid phase within the mediation layer.

### Claim 18 (depends on 1)

The device of claim 1, wherein the electrode comprises a n- or p-doped silicon substrates.

### Claim 19 (depends on 1)

The device of claim 1, wherein the layer of material is exposed to gas or liquid or an analyte.

### Claim 20 (depends on 1)

A bottom contacted 2D-layer device comprising the device of claim 1.

### Claim 21 (depends on 1)

A photosensor comprising the device of claim 1.

### Claim 22 (depends on 1)

An array sensor comprising a plurality of devices, wherein at least one device comprises the sensor device of claim 1.
