# US 2014/0151630 A1 · Protection for the epitaxial structure of metal devices

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- Number: US 2014/0151630 A1
- Document ID: US20140151630A1
- Status: Published application
- Kind: A1
- Application number: 13/693,199
- Filed: 2012-12-04
- Published: 2014-06-05
- Earliest claimed: 2012-12-04
- Inventors: Feng-Hsu Fan; Trung Tri Doan; Chuong Anh Tran; Chen-Fu Chu; Chao-Chen Cheng; Jiunn-Yi Chu; Wen-Huang Liu; Hao-Chun Cheng; Jui-Kang Yen
- Web page: https://patentgrep.com/patent/US20140151630A1

## CPC

- H10H 20/018: {Bonding of wafers}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H01S 5/0217: {Removal of the substrate}
- H01S 5/18375: {based on metal reflectors}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

## Claims

### Claim 1

A semiconductor die comprising:
a metal substrate;
an epitaxial structure disposed above the metal substrate, comprising:
a p-doped layer coupled to the metal substrate; and
an n-doped layer disposed above the p-doped layer;
an electrically non-conductive material substantially covering lateral surfaces of the epitaxial structure; and
an insulative layer disposed between the lateral surfaces of the epitaxial structure and the electrically non-conductive material.

### Claim 2 (depends on 1)

The die of claim 1, wherein the non-conductive material is an organic material comprising at least one of epoxy, a polymer, a polyimide, thermoplastic, or sol-gel.

### Claim 3 (depends on 1)

The die of claim 1, wherein the non-conductive material is a photosensitive organic material comprising at least one of SU-8, NR-7, or AZ5214E.

### Claim 4 (depends on 1)

The die of claim 1, wherein the non-conductive material is an inorganic material comprising at least one of SiO2, ZnO, Ta2O5, TiO2, HfO, or MgO.

### Claim 5 (depends on 1)

The die of claim 1, wherein the non-conductive material does not cover an upper surface of the n-doped layer.

### Claim 6 (depends on 1)

The die of claim 1, wherein the non-conductive material covers at least a portion of an upper surface of the n-doped layer.

### Claim 7 (depends on 1)

The die of claim 1, wherein the non-conductive material is disposed on a portion of the metal substrate.

### Claim 8 (depends on 1)

The die of claim 1, wherein the metal substrate comprises at least one of Cu, Ni, Au, Ag, Co, or alloys thereof.

### Claim 9 (depends on 1)

The die of claim 1, wherein the metal substrate comprises a single layer or multiple layers.

### Claim 10 (depends on 1)

The die of claim 1, wherein the p-doped layer or the n-doped layer comprises at least one of GaN, AlGaN, InGaN, or AlInGaN.

### Claim 11 (depends on 1)

The die of claim 1, further comprising a multiple quantum well (MQW) layer disposed between the p-doped layer and the n-doped layer.

### Claim 12 (depends on 1)

The die of claim 1, further comprising a reflective layer disposed between the metal substrate and the p-doped layer.

### Claim 13 (depends on 12)

The die of claim 12, wherein the non-conductive material substantially covers lateral surfaces of the reflective layer.

### Claim 14 (depends on 12)

The die of claim 12, wherein the reflective layer comprises at least one of Ag, Au, Cr, Pt, Pd, Al, Ni/Ag/Ni/Au, Ag/Ni/Au, Ti/Ag/Ni/Au, Ag/Pt, Ag/Pd, Ag/Cr, or alloys thereof.

### Claim 15 (depends on 1)

The die of claim 1, wherein the die is a vertical light-emitting diode (VLED) die, a power device die, a laser diode die, or a vertical cavity surface emitting device die.

### Claim 16

A vertical light-emitting diode (VLED) die comprising:
a metal substrate;
an epitaxial structure disposed above the metal substrate, comprising:
a p-GaN layer coupled to the metal substrate;
a multiple well quantum (MQW) layer for emitting light coupled to the p-doped layer; and
an n-GaN layer coupled to the MQW layer;
an electrically non-conductive material surrounding the epitaxial structure except for an upper surface of the n-GaN layer and a portion of the p-GaN layer coupled to the metal substrate; and
an insulative layer disposed between the epitaxial structure and the electrically non-conductive material.

### Claim 17

A semiconductor die comprising:
a metal substrate;
a p-doped layer coupled to the metal substrate;
a multiple quantum well (MQW) layer disposed above the p-doped layer;
an n-doped layer disposed above the MQW layer;
an electrically non-conductive material substantially covering at least lateral surfaces of the MQW layer; and
an insulative layer disposed between the MQW layer and the electrically non-conductive material.