# US 2014/0151624 A1 · Target, method for producing the same, memory, and method for producing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0151624 A1 - Document ID: US20140151624A1 - Status: Published application - Kind: A1 - Application number: 14/174,917 - Filed: 2014-02-07 - Published: 2014-06-05 - Earliest claimed: 2009-07-28 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Kazuhiro Ohba; Yuichi Kamori; Hitoshi Kimura - Web page: https://patentgrep.com/patent/US20140151624A1 ## CPC - H10N 70/24: {based on migration or redistribution of ionic species, e.g. anions, vacancies} - B22F 9/04: starting from solid material, e.g. by crushing, grinding or milling ({C22C1/1084 takes precedence}; crushing, grinding or milling, in general, see the relevant subclasses, e.g. B02C) - C22C 1/05: Mixtures of metal powder with non-metallic powder (C22C1/08 takes precedence) - C23C 14/14: Metallic material, boron or silicon - C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy} - H10N 70/011: {Manufacture or treatment of multistable switching devices} - H10N 70/026: {by physical vapor deposition, e.g. sputtering} - H10N 70/245: {the species being metal cations, e.g. programmable metallization cells} - H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} - H10N 70/8416: {adapted for supplying ionic species} - H10N 70/882: {Compounds of sulfur, selenium or tellurium, e.g. chalcogenides} - H10N 70/883: {Oxides or nitrides} - H10N 70/8833: {Binary metal oxides, e.g. TaOx} - Y10T 428/31678: Of metal - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER - C22C: ALLOYS (treatment of alloys C21D, C22F) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te. And a method for producing the target. ## Claims ### Claim 1 A method for producing a target containing a chalcogen element, comprising the steps of: forming an alloy ingot using at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids and an additional element outside of the group; pulverizing the alloy ingot; and forming a target using the pulverized alloy ingot and at least one chalcogen element selected from the group consisting of S, Se, and Te. ### Claim 2 (depends on 1) A method for producing a target according to claim 1, wherein in the step of forming an alloy ingot, a material having a particle diameter of 100 μm or more is used as the at least one refractory metal element that serves as a raw material. ### Claim 3 (depends on 1) A method for producing a target according to claim 1, wherein the additional element outside of the group is at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga. ### Claim 4 (depends on 1) A method for producing a target according to claim 1, further comprising the steps of: alloying the at least one chalcogen element and at least one additional element that is not a chalcogen element to form a second alloy ingot including the at least one chalcogen element; and pulverizing the second alloy ingot, wherein, the step of forming a target is performed using the pulverized alloy ingot and the pulverized second alloy ingot. ### Claim 5 (depends on 4) A method for producing a target according to claim 4, wherein the second alloy ingot has a melting point higher than the melting point of the at least one chalcogen element. ### Claim 6 (depends on 4) A method for producing a target according to claim 4, wherein the second alloy ingot is formed using as the at least one additional element that is not a chalcogen element at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga. ### Claim 7 A memory comprising a plurality of memory devices, the memory devices including an ionization layer that is formed using a target containing at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids, at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga, and at least one chalcogen element selected from S, Se, and Te, and contains an element to be ionized. ### Claim 8 A method for producing a memory including a plurality of memory devices, the method comprising the steps of: forming an alloy ingot using at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids and an additional element outside of the group; pulverizing the alloy ingot; forming a target using the pulverized alloy ingot and at least one chalcogen element selected from the group consisting of S, Se, and Te; and forming an ionization layer of the memory devices by sputtering using the target, the ionization layer containing an element to be ionized.