# US 2014/0151620 A1 · Self-aligned wire for spintronic device

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- Number: US 2014/0151620 A1
- Document ID: US20140151620A1
- Status: Published application
- Kind: A1
- Application number: 13/960,204
- Filed: 2013-08-06
- Published: 2014-06-05
- Earliest claimed: 2012-11-30
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: David W. Abraham; Philip L. Trouilloud; Daniel C. Worledge
- Web page: https://patentgrep.com/patent/US20140151620A1

## CPC

- H10N 50/01: Manufacture or treatment
- B82Y 25/00: Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
- Y10S 977/933: Spintronics or quantum computing
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A method for fabricating a spintronic cell includes forming a cavity in a substrate, forming a wire in the cavity, depositing a spacer layer over exposed portions of the substrate and the conductive field line, depositing a layer of conductive material on a portion of the spacer layer, removing portions of the layer of conductive material to define a conductive strap portion, wherein the conductive strap portion has a first distal region a second distal region and a medial region arranged therebetween, wherein the medial region has a cross sectional area that is less than a cross sectional area of the first distal region and a cross sectional area of the second distal region, and forming an spintronic device stack on the conductive strap portion above the conductive field line.

## Claims

### Claim 1

A spintronic cell comprising:
a substrate;
a wire arranged on the substrate;
a spacer layer disposed on the substrate and the conductive field line;
a conductive strap portion arranged over a portion of the spacer layer, the conductive strap portion having a regions with a first cross sectional area above the wire and a second cross sectional area in regions of the wire that are above the substrate and extend outwardly from the region with the first cross sectional area, wherein the first cross sectional area is less than the second cross sectional area; and
a spintronic device stack arranged on the conductive strap portion above the conductive field line.

### Claim 2 (depends on 1)

The cell of claim 1, further comprising a first insulator layer arranged on a portion of the spacer layer.

### Claim 3 (depends on 2)

The cell of claim 2, further comprising a second insulator layer arranged over portions of the first insulator layer and portions of the conductive strap portion.

### Claim 4 (depends on 3)

The cell of claim 3, further comprising a conductive electrode in contact with a portion of the spintronic device stack.

### Claim 5 (depends on 1)

The cell of claim 1, wherein the substrate includes an insulator material.

### Claim 6 (depends on 1)

The cell of claim 1, wherein the wire is partially disposed in a cavity defined by the substrate.