# US 2014/0151612 A1 · Nanoparticles passivated with cationic metal-chalcogenide compound

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- Number: US 2014/0151612 A1
- Document ID: US20140151612A1
- Status: Published application
- Kind: A1
- Application number: 14/096,585
- Filed: 2013-12-04
- Published: 2014-06-05
- Earliest claimed: 2012-12-04
- Assignees: Ajou University Industry Cooperation Foundation; Samsung Electronics Co., Ltd.
- Applicants: Ajou University Industry Cooperation Foundation; Samsung Electronics Co., Ltd.
- Inventors: Kyung-sang CHO; Sang-wook KIM; Tae-ho KIM; Dong-hyeok CHOI; Byoung-lyong CHOI
- Web page: https://patentgrep.com/patent/US20140151612A1

## CPC

- C01B 17/20: Methods for preparing sulfides or polysulfides, in general (ammonium sulfides or polysulfides C01C; sulfides or polysulfides of metals, other than alkali metals, magnesium, calcium, strontium and barium, see the relevant groups of subclasses C01F or C01G, according to the metal)
- C01B 19/002: {Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions}
- C01B 19/007: {Tellurides or selenides of metals (C01B19/002 takes precedence)}
- C01G 1/12: Sulfides
- C01G 11/02: Sulfides
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- C01P 2002/86: by NMR- or ESR-data
- C01P 2004/64: Nanometer sized, i.e. from 1-100 nanometer
- C01P 2004/84: one phase coated with the other
- C01P 2006/90: Other properties not specified above
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle

## Claims

### Claim 1

A cationic metal-chalcogenide compound.

### Claim 2 (depends on 1)

The cationic metal-chalcogenide compound of claim 1, wherein the cationic metal-chalcogenide compound is selected from the group consisting of Zn2S2, Zn2Se2, Zn2Te2, Cu2S2, Cu2Se2, Cu2Te2, Mn2S2, Mn2Se2, Mn2Te2, Fe2S2, Fe2Se2, Fe2Te2, Co2S2, Co2Se2, Co2Te2, and mixtures thereof.

### Claim 3

A passivated nanoparticle comprising:
a core nanoparticle; and
a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle.

### Claim 4 (depends on 3)

The passivated nanoparticle of claim 3, wherein the cationic MCC is selected from the group consisting of Zn2S2, Zn2Se2, Zn2Te2, Cu2S2, Cu2Se2, Cu2Te2, Mn2S2, Mn2Se2, Mn2Te2, Fe2S2, Fe2Se2, Fe2Te2, Co2S2, Co2Se2, Co2Te2, and mixtures thereof.

### Claim 5 (depends on 3)

The passivated nanoparticle of claim 3, wherein the core nanoparticle is a quantum dot, a metal nanocrystal (NC), a magnetic NC, an oxide NC, a nanowire, or a nanoplate.

### Claim 6 (depends on 5)

The passivated nanoparticle of claim 5, wherein the quantum dot is selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, CdHgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, Si, Ge, SiC, SiGe, and combinations thereof.

### Claim 7 (depends on 5)

The passivated nanoparticle of claim 5, wherein the quantum dot has a core-shell structure or a core-shell-shell structure.

### Claim 8

A passivated nanoparticle colloid comprising:
a plurality of passivated nanoparticles, each of the passivated nanoparticles comprising a core nanoparticle and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle; and
a dispersion medium in which the passivated nanoparticles are dispersed.

### Claim 9 (depends on 8)

The passivated nanoparticle colloid of claim 8, wherein the dispersion medium comprises ethanol amine, dimethyl sulfoxide (DMSO), dimethylformamide (DMF), formamide, water, hydrazine, or hydrazine hydrate.

### Claim 10

A method of preparing a cationic metal-chalcogenide compound, the method comprising:
reacting a chalcogen element with NaBH4 to form a sodium-chalcogenide compound;
reacting the sodium-chalcogenide compound with a metal perchlorate to form a metal-chalcogenide perchlorate; and
reacting the metal-chalcogenide perchlorate with ethanolamine to form a metal-chalcogenide compound.

### Claim 11 (depends on 10)

The method of claim 10, wherein the metal perchlorate is selected from the group consisting of zinc perchlorate, tin perchlorate, indium perchlorate, antimony perchlorate, sodium perchlorate, silver perchlorate, iron perchlorate, potassium perchlorate, magnesium perchlorate, barium perchlorate, calcium perchlorate, cadmium perchlorate, aluminum perchlorate, manganese perchlorate, and platinum perchlorate.

### Claim 12

A method of preparing passivated nanoparticles, the method comprising:
providing a first dispersion, which is a dispersion of nanoparticles having a first organic ligand in a first organic solvent;
preparing a second solution, which is a solution of a cationic metal-chalcogenide compound in a second organic solvent;
mixing the first dispersion and the second solution to form a mixed solution; and
stirring the mixed solution thereby exchanging the first organic ligand of the nanoparticles with the cationic metal-chalcogenide compound.

### Claim 13 (depends on 12)

The method of claim 12, wherein the cationic metal-chalcogenide compound is selected from the group consisting of Zn2S2, Zn2Se2, Zn2Te2, Cu2S2, Cu2Se2, Cu2Te2, Mn2S2, Mn2Se2, Mn2Te2, Fe2S2, Fe2Se2, Fe2Te2, Co2S2, Co2Se2, Co2Te2, and mixtures thereof.

### Claim 14 (depends on 12)

The method of claim 12, wherein the first organic ligand is selected from the group consisting of trioctylphosphine (TOP), trioctylphosphine oxide (TOPO), oleic acid, oleylamine, octylamine, trioctylamine, hexadecylamine, octanethiol, dodecanethiol, hexylphosphonic acid (HPA), tetradecylphosphonic acid (TDPA), octylphosphonic acid (OPA), and combinations thereof.

### Claim 15 (depends on 12)

The method of claim 12, wherein the first organic solvent is cyclohexane, hexane, chloroform, toluene, octane, chlorobenzene, or a mixture thereof.

### Claim 16 (depends on 12)

The method of claim 12, wherein the nanoparticle is a quantum dot, a metal nanocrystal (NC), a magnetic NC, an oxide NC, a nanowire, or a nanoplate.

### Claim 17 (depends on 16)

The method of claim 16, wherein the quantum dot is selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, CdHgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe; GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb; SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe; Si, Ge, SiC, SiGe, and combinations thereof.

### Claim 18 (depends on 16)

The method of claim 16, wherein the quantum dot has a core-shell structure or a core-shell-shell structure.

### Claim 19 (depends on 12)

The method of claim 12, wherein the mixed solution is phase separated into a first organic solvent layer from the first dispersion and a second organic solvent layer from the second solution.

### Claim 20 (depends on 12)

The method of claim 12, wherein the second organic solvent is ethanol amine, dimethyl sulfoxide (DMSO), dimethylformamide (DMF), formamide, water, hydrazine, hydrazine hydrate, or a mixture thereof.