# US 2014/0151573 A1 · Multi-energy ion implantation > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0151573 A1 - Document ID: US20140151573A1 - Status: Published application - Kind: A1 - Application number: 14/173,776 - Filed: 2014-02-05 - Published: 2014-06-05 - Earliest claimed: 2012-12-03 - Assignees: Advanced Ion Beam Technology, Inc. - Applicants: Advanced Ion Beam Technology, Inc. - Inventors: Zhimin Wan - Web page: https://patentgrep.com/patent/US20140151573A1 ## CPC - H01J 37/3171: {for ion implantation} - H01J 37/302: Controlling tubes by external information, e.g. program control (H01J37/304 takes precedence) - H10P 30/204: {into Group IV semiconductors} - H10P 30/21: {of electrically active species} - H01J 2237/047: Changing particle velocity - H01J 2237/30472: Controlling the beam - H10D 30/0241: {doping of vertical sidewalls, e.g. using tilted or multi-angled implants} - H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy. ## Claims ### Claim 1 A method for multi-energy ion implantation into a target using an ion implanting system, the ion implanting system having an ion source, an extraction assembly, and an electrode assembly, the method comprising: generating, using the ion source and the extraction assembly, an ion beam having a first energy; applying a first voltage across the electrode assembly; wherein the ion beam enters the electrode assembly at the first energy, exits the electrode assembly at a second energy, and implants ions into the target at the second energy; and applying a second voltage across the electrode assembly; wherein the ion beam enters the electrode assembly at the first energy, exits the electrode assembly at a third energy, and implants ions into the target at the third energy, and wherein the second energy is different from the third energy. ### Claim 2 (depends on 1) The method of claim 1, wherein the first voltage is approximately zero and the first energy is approximately equal to the second energy. ### Claim 3 (depends on 1) The method of claim 1, wherein the first voltage is applied across the electrode assembly to accelerate the ion beam, and wherein the second energy is higher than the first energy. ### Claim 4 (depends on 1) The method of claim 1, wherein the first voltage is applied across the electrode assembly to decelerate the ion beam, and wherein the second energy is lower than the first energy. ### Claim 5 (depends on 1) The method of claim 1, wherein the third energy is lower than the second energy. ### Claim 6 (depends on 1) The method of claim 1, wherein the third energy is higher than the second energy. ### Claim 7 (depends on 1) The method of claim 1, wherein the first energy is between 2 keV and 30 keV. ### Claim 8 (depends on 1) The method of claim 1, wherein the first voltage is between 0 kV and 30 kV, the second voltage is between 0 kV and 30 kV, the second energy is between 0.05 keV and 30 keV, and the third energy is between 0.05 keV and 30 keV. ### Claim 9 (depends on 1) The method of claim 1, wherein the ion beam is deflected in the electrode assembly and wherein the ion beam exits the electrode assembly having an energy contamination of less than 0.05%. ### Claim 10 (depends on 1) The method of claim 1, wherein the second voltage is applied after the first voltage and the target is implanted at the third energy within 30 seconds of applying the second voltage. ### Claim 11 (depends on 1) The method of claim 1, further comprising: applying a third voltage across the electrode assembly, wherein the ion beam enters the electrode assembly at the first energy, exits the electrode assembly at a forth energy, and implants ions into the target at the forth energy, and wherein the forth energy is different from both the second energy and the third energy. ### Claim 12 (depends on 1) The method of claim 1, wherein the target is disposed on a holding apparatus in the ion implanting system and the target remains on the holding apparatus during and between implanting the target at the second energy and the third energy. ### Claim 13 (depends on 1) The method of claim 1, wherein the target moves at a first velocity while the ion beam implants ions into the target at the second energy, wherein the target moves at a second velocity while the ion beam implants ions into the target at the third energy, and wherein the first velocity is different from the second velocity. ### Claim 14 (depends on 1) The method of claim 1, wherein the ion beam is generated having a first current, the ion beam is directed through a variable aperture in the ion implanting system, and while applying the first voltage, the variable aperture is set to a first aperture width, wherein the ion beam exits the variable aperture having a current lower than the first current, wherein the ion beam implants ions into the target at a second current, and wherein the second current is lower than the first current. ### Claim 15 (depends on 14) The method of claim 14, wherein while applying the second voltage, the variable aperture is set to a second aperture width, wherein the ion beam exits the variable aperture having a current lower than the first current, wherein the ion beam implants ions into the target at a third current, and wherein the second aperture width is different from the first aperture width, and the third current is different from the second current. ### Claim 16 A non-transitory computer-readable storage medium containing computer executable instructions for multi-energy ion implantation into a target using an ion implanting system, the ion implanting system having an ion source, an extraction assembly, and an electrode assembly, the computer executable instructions comprising instructions for: generating, using the ion source and the extraction assembly, an ion beam having a first energy; applying a first voltage across the electrode assembly; wherein the ion beam enters the electrode assembly at the first energy, exits the electrode assembly at a second energy, and implants ions into the target at the second energy; and applying a second voltage across the electrode assembly; wherein the ion beam enters the electrode assembly at the first energy, exits the electrode assembly at a third energy, and implants ions into the target at the third energy, and wherein the second energy is different from the third energy. ### Claim 17 (depends on 16) The non-transitory computer-readable storage medium of claim 16, wherein the second voltage is applied after the first voltage and the target is implanted at the third energy within 30 seconds of applying the second voltage. ### Claim 18 (depends on 16) The non-transitory computer-readable storage medium of claim 16, wherein the target moves at a first velocity while the ion beam implants ions into the target at the second energy, wherein the target moves at a second velocity while the ion beam implants ions into the target at the third energy, and wherein the first velocity is different from the second velocity. ### Claim 19 (depends on 16) The non-transitory computer-readable storage medium of claim 16, wherein the ion beam is generated having a first current, the ion beam is directed through a variable aperture in the ion implanting system, and while applying the first voltage, the variable aperture is set to a first aperture width, wherein the ion beam exits the variable aperture having a current lower than the first current, wherein the ion beam implants ions into the target at a second current, and wherein the second current is lower than the first current. ### Claim 20 (depends on 19) The non-transitory computer-readable storage medium of claim 19, wherein while applying the second voltage, the variable aperture is set to a second aperture width, wherein the ion beam exits the variable aperture having a current lower than the first current, wherein the ion beam implants ions into the target at a third current, and wherein the second aperture width is different from the first aperture width, and the third current is different from the second current.