# US 2014/0151531 A1 · Solid-state image pickup device and method of driving the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0151531 A1 - Document ID: US20140151531A1 - Status: Published application - Kind: A1 - Application number: 14/079,103 - Filed: 2013-11-13 - Published: 2014-06-05 - Earliest claimed: 2012-12-05 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Kazuyoshi Yamashita - Web page: https://patentgrep.com/patent/US20140151531A1 ## CPC - H10F 39/8027: {Geometry of the photosensitive area} - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/182: {Colour image sensors} - H10F 39/199: {Back-illuminated image sensors} - H10F 39/80: {Constructional details of image sensors} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/80373: {characterised by the gate of the transistor} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F 39/811: {Interconnections} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10W 20/496: {Capacitor integral with wiring layers} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch. ## Claims ### Claim 1 An image sensor, comprising: a semiconductor substrate, including: a photoelectric conversion element; a charge-voltage conversion element; a capacitance switch; a charge accumulation element adjacent the photoelectric conversion element, wherein at least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element, wherein the charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch. ### Claim 2 (depends on 1) The image sensor of claim 1, wherein a capacitance of the charge accumulation element is added to a capacitance of the charge-voltage conversion element when the capacitance switch is closed. ### Claim 3 (depends on 1) The image sensor of claim 1, wherein the photoelectric conversion element is provided between the charge accumulation element and a light receiving surface of the semiconductor substrate. ### Claim 4 (depends on 1) The image sensor of claim 1, further comprising: a wiring layer, wherein the image sensor is a back illumination type image sensor in which the photoelectric conversion element is provided between a light receiving surface of the semiconductor substrate and the wiring layer. ### Claim 5 (depends on 4) The image sensor of claim 4, wherein the charge accumulation element is part of the wiring layer. ### Claim 6 (depends on 1) The image sensor of claim 1, further comprising: a light shielding layer. ### Claim 7 (depends on 6) The image sensor of claim 6, wherein the charge accumulation element is formed as part of the light shielding layer. ### Claim 8 (depends on 6) The image sensor of claim 6, wherein the charge accumulation element is formed between the light shielding layer and the photoelectric conversion element. ### Claim 9 (depends on 1) The image sensor of claim 1, wherein a plurality of photoelectric conversion elements and a plurality of charge-voltage conversion elements share a single one of the charge accumulation elements. ### Claim 10 (depends on 1) The image sensor of claim 1, wherein the charge accumulation element includes first and second electrodes, wherein a first one of the electrodes is connected to the capacitance switch. ### Claim 11 (depends on 1) The image sensor of claim 1, wherein the charge-voltage conversion element is a floating diffusion region, and wherein the charge accumulation element is a capacitor. ### Claim 12 (depends on 1) The image sensor of claim 1, wherein the image sensor is a front illumination type image sensor, wherein the charge-voltage conversion element is included in an image plane phase difference pixel, and wherein the charge accumulation element operates as a light shielding layer with respect to the charge-voltage conversion element. ### Claim 13 An imaging apparatus, comprising: an optical section; a solid-state image pickup device operable to receive light from the optical section, including: a photoelectric conversion element; a charge-voltage conversion element; a capacitance switch; a charge accumulation element adjacent the photoelectric conversion element, wherein at least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element, and wherein the charge accumulation element can be selectively connected to the charge-voltage conversion element by the capacitance switch; and a digital signal processor, wherein the digital signal processor receives a signal from the solid-state image pickup device. ### Claim 14 (depends on 13) The apparatus of claim 13, wherein the photoelectric conversion element is provided between the charge accumulation element and a light receiving surface of a semiconductor substrate in which the photoelectric conversion elements are formed. ### Claim 15 (depends on 14) The apparatus of claim 14, further comprising: a wiring layer, wherein the image sensor is a back illumination type image sensor in which the photoelectric conversion element is provided between a light receiving surface of the semiconductor substrate and the wiring layer. ### Claim 16 (depends on 15) The apparatus of claim 15, wherein the charge accumulation element is part of the wiring layer. ### Claim 17 (depends on 13) The apparatus of claim 13, further comprising: a light shielding layer. ### Claim 18 (depends on 17) The apparatus of claim 17, wherein the charge accumulation element is formed between the light shielding layer and the photoelectric conversion element. ### Claim 19 A method of driving an image sensor, comprising: providing a solid-state image sensor, including: a photoelectric conversion element; a charge-voltage conversion element; a charge accumulation element adjacent the photoelectric conversion element, wherein at least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element, and wherein a capacitance of the charge accumulation element is capable of being added to a capacitance of the charge-voltage conversion element; detecting an illuminance condition; in response to determining that the illuminance condition is low, electrically disconnecting the charge-voltage conversion element from the charge accumulation element; in response to determining that the illuminance condition is high, electrically connecting the charge-voltage conversion element to the charge accumulation element. ### Claim 20 (depends on 19) The method of claim 19, further comprising: providing a capacitance switch, wherein the charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch. ### Claim 21 (depends on 20) The method of claim 20, further comprising: opening the capacitance switch to electrically disconnect the charge-voltage conversion element from the charge accumulation element. ### Claim 22 (depends on 20) The method of claim 20, further comprising: closing the capacitance switch to electrically connect the charge-voltage conversion element to the charge accumulation element. ### Claim 23 (depends on 19) The method of claim 19, wherein the solid-state image sensor is a back illumination type image sensor. ### Claim 24 (depends on 19) The method of claim 19, wherein the solid-state image sensor is a front illumination type sensor and includes an image plane phase difference pixel, the method further comprising: using the image plane phase difference pixel for image plane phase difference auto focus, wherein the charge accumulation element operates as a light shielding layer of the image plane phase difference pixel.