# US 2014/0151331 A1 · Deposition shield for plasma enhanced substrate processing > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0151331 A1 - Document ID: US20140151331A1 - Status: Published application - Kind: A1 - Application number: 13/778,252 - Filed: 2013-02-27 - Published: 2014-06-05 - Earliest claimed: 2012-12-05 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: VALENTIN N. TODOROW; MICHAEL D. WILLWERTH; YING-SHENG LIN; DAVID PALAGASHVILI - Web page: https://patentgrep.com/patent/US20140151331A1 ## CPC - H01J 37/321: {the radio frequency energy being inductively coupled to the plasma} - H01J 37/32477: {characterised by the means for protecting vessels or internal parts, e.g. coatings} - H01J 37/32651: {Shields, e.g. dark space shields, Faraday shields} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Methods and apparatus for plasma processing of substrates are provided herein. In some embodiments, a deposition shield for use in processing a substrate having a given width may include a first plate having a first plurality of holes disposed through a thickness of the first plate; and a second plate disposed below the first plate and having a second plurality of holes disposed through a thickness of the second plate, wherein individual holes in the first plurality of holes and the second plurality of holes are not aligned. ## Claims ### Claim 1 A deposition shield for use in processing a substrate having a given width, comprising: a first plate having a first plurality of holes disposed through a thickness of the first plate; and a second plate disposed below the first plate and having a second plurality of holes disposed through a thickness of the second plate, wherein individual holes in the first plurality of holes and the second plurality of holes are not aligned. ### Claim 2 (depends on 1) The deposition shield of claim 1, wherein the first plate and the second plate are made of dielectric materials. ### Claim 3 (depends on 1) The deposition shield of claim 1, wherein the first plate and the second plate are made of quartz or ceramic. ### Claim 4 (depends on 1) The deposition shield of claim 1, wherein the first plate and the second plate have a diameter that is greater than the given width of the substrate. ### Claim 5 (depends on 1) The deposition shield of claim 1, further comprising: a plurality of spacers disposed between the first plate and the second plate to maintain the first and second plates in a spaced apart relation; and a plurality of legs to support the second plate in a desired position. ### Claim 6 (depends on 5) The deposition shield of claim 5, further comprising: a plurality of elongate members that pass through the second plate and are coupled to the first plate, wherein a portion of the elongate members that are disposed between the first and second plates form the plurality of spacers and wherein a portion of the elongate members that are disposed below the second plate form the plurality of legs. ### Claim 7 (depends on 5) The deposition shield of claim 5, further comprising: a base ring disposed at an end of the plurality of legs opposite the second plate, wherein the base ring and the plurality of legs together form a support structure for supporting the second plate in a desired position. ### Claim 8 (depends on 7) The deposition shield of claim 7, wherein the base ring includes a substantially planar surface opposite the second plate and a plurality of features to align and or facilitate retaining the base ring on a surface that the base ring is placed. ### Claim 9 A process chamber for processing a substrate, comprising: a chamber body having an inner volume and a dielectric lid; a gas inlet to provide a gas to the inner volume; an RF power source disposed above the dielectric lid to couple RF power to the gas during use; a substrate support disposed in the inner volume opposite the dielectric lid and having a support surface to support a substrate having a given width; and a deposition shield comprising one or more plates of a dielectric material supported in the inner volume that prevents any line of sight between the support surface of the substrate support and the dielectric lid. ### Claim 10 (depends on 9) The process chamber of claim 9, wherein the gas inlet is configured to provide the gas to a region disposed between the deposition shield and the support surface, and wherein the deposition shield does not have any holes disposed through the first plate. ### Claim 11 (depends on 9) The process chamber of claim 9, wherein the deposition shield comprises: a first plate having a first plurality of holes disposed through a thickness of the first plate; and a second plate disposed below the first plate and having a second plurality of holes disposed through a thickness of the second plate, wherein individual holes in the first plurality of holes and the second plurality of holes are not aligned. ### Claim 12 (depends on 11) The process chamber of claim 11, further comprising: a plurality of spacers disposed between the first plate and the second plate to maintain the first and second plates in a spaced apart relation; and a plurality of legs disposed on the substrate support to support the second plate in a desired position. ### Claim 13 (depends on 12) The process chamber of claim 12, further comprising: a plurality of elongate members that pass through the second plate and are coupled to the first plate, wherein a portion of the elongate members that are disposed between the first and second plates form the plurality of spacers and wherein a portion of the elongate members that are disposed below the second plate form the plurality of legs. ### Claim 14 (depends on 9) The process chamber of claim 9, further comprising: a plurality of legs disposed between the substrate support and the deposition shield to support the deposition shield in a desired position. ### Claim 15 (depends on 14) The process chamber of claim 14, further comprising: a base ring disposed atop the substrate support and having the plurality of legs extending therefrom. ### Claim 16 (depends on 15) The process chamber of claim 15, wherein the base ring includes a plurality of features to align and or facilitate retaining the base ring on a the substrate support. ### Claim 17 (depends on 9) The process chamber of claim 9, wherein the process chamber is an etch chamber. ### Claim 18 A method of processing a substrate, comprising: forming a plasma in a process chamber using RF power inductively coupled to the plasma from an electrode disposed proximate a dielectric lid of the process chamber; processing a substrate disposed on a substrate support in the process chamber while the plasma is maintained; and providing a deposition shield disposed between the substrate and the dielectric lid while processing the substrate, wherein the deposition shield blocks any line of sight between the substrate and the dielectric lid. ### Claim 19 (depends on 18) The method of claim 18, wherein processing the substrate comprises forming process byproduct, wherein the process byproduct is predominantly exhausted from the chamber or deposited on the deposition shield or sidewalls of the process chamber. ### Claim 20 (depends on 19) The method of claim 19, wherein processing the substrate further comprises etching the substrate.