# US 2014/0150864 A1 · Gas Barrier Film and Electronic Device

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- Number: US 2014/0150864 A1
- Document ID: US20140150864A1
- Status: Published application
- Kind: A1
- Application number: 14/177,143
- Filed: 2014-02-10
- Published: 2014-06-05
- Earliest claimed: 2011-09-26
- Assignees: Lintec Corporation
- Inventors: Sinichi Hoshi; Shigeto Okuji
- Web page: https://patentgrep.com/patent/US20140150864A1

## CPC

- B32B 27/06: as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a layer of a particular substance B32B9/045; next to a bituminous or tarry layer B32B11/046; next to a water setting substance layer B32B13/12; next to a metal layer B32B15/08; next to a glass layer B32B17/10; next to a layer formed of natural mineral fibres or particles B32B19/045; next to a wood layer B32B21/08; next to a cellulosic plastic layer B32B23/08; next to a natural or synthetic rubber layer B32B25/08)}
- B32B 9/007: {comprising carbon, e.g. graphite, composite carbon}
- B32B 9/045: {of synthetic resin}
- B32B 15/08: of synthetic resin
- B32B 27/08: of synthetic resin
- B32B 27/28: comprising synthetic resins not wholly covered by any one of the sub-groups {B32B27/30 - B32B27/42}
- B32B 27/281: {comprising polyimides}
- B32B 27/283: {comprising polysiloxanes}
- B32B 27/286: {comprising polysulphones; polysulfides}
- B32B 27/288: {comprising polyketones}
- B32B 27/308: {comprising acrylic (co)polymers}
- B32B 27/32: comprising polyolefins {(comprising vinyl (co)polymers or acrylic (co)polymers B32B27/30)}
- B32B 27/34: comprising polyamides
- B32B 27/36: comprising polyesters
- B32B 27/365: {comprising polycarbonates}
- B32B 33/00: Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
- C08J 7/0423: {with at least one layer of inorganic material and at least one layer of a composition containing a polymer binder}
- C08J 7/043: Improving the adhesiveness of the coatings per se, e.g. forming primers (adhesives in the form of films or foils characterised by the primer layers between the polymer carriers and the adhesives C09J7/50)
- C08J 7/048: Forming gas barrier coatings
- C23C 14/024: {Deposition of sublayers, e.g. to promote adhesion of the coating (C23C14/027 takes precedence)}
- C23C 14/0641: {Nitrides (C23C14/0617 takes precedence)}
- C23C 14/0652: {Silicon nitride}
- C23C 14/08: Oxides (C23C14/10 takes precedence)
- C23C 14/345: {using substrate bias}
- C23C 14/3485: {using pulsed power to the target}
- H10F 19/85: Protective back sheets
- B32B 2307/306: Resistant to heat
- B32B 2307/412: Transparent
- B32B 2307/538: Roughness
- B32B 2307/712: Weather resistant
- B32B 2307/7242: Non-permeable
- B32B 2307/7246: Water vapor barrier
- B32B 2307/732: Dimensional properties
- B32B 2457/00: Electrical equipment
- C08J 2367/02: Polyesters derived from dicarboxylic acids and dihydroxy compounds; (C08J2367/06 takes precedence)
- C08J 2483/04: Polysiloxanes
- Y02E 10/50: Photovoltaic [PV] energy
- Y10T 428/263: Coating layer not in excess of 5 mils thick or equivalent
- Y10T 428/265: 1 mil or less
- Y10T 428/31663: As siloxane, silicone or silane
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- C08J: WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H (working, e.g. shaping, of plastics B29)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Disclosed is a gas barrier film, which demonstrates superior gas barrier properties and surface flatness, demonstrates a high degree of adhesion between layers and is resistant to cracking when bent, and an electronic device provided therewith. A gas barrier film (10) of the present invention has a base (11), and a polyorganosiloxane layer (12) and an inorganic material layer (13) sequentially provided on at least one side of the base (11), and the inorganic material layer (13) is deposited by dynamic ion mixing method.

## Claims

### Claim at position 1

1-15. (canceled)

### Claim 16

A method of producing a gas barrier film, comprising:
forming a layer containing a polyorganosiloxane-based compound on a base,
subsequently, forming an inorganic material layer on the layer containing the polyorganosiloxane-based compound by dynamic ion mixing method,
wherein the layer containing the polyorganosiloxane-based compound and the inorganic material layer are sequentially laminated on at least one side of the base.

### Claim 17 (depends on 16)

The method of producing a gas barrier film according to claim 16, wherein an inorganic compound that composes the inorganic material layer is selected from at least one type of inorganic compound consisting of an elemental metal, silicon, graphite, inorganic oxide, inorganic nitride and inorganic oxynitride.

### Claim 18 (depends on 16)

The method of producing a gas barrier film according to claim 16, wherein inorganic compound is selected from at least one type of inorganic compound consisting of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, indium oxide and tin-doped indium oxide.

### Claim 19 (depends on 16)

The method of producing a gas barrier film according to claim 16, wherein a plasma-forming gas used in the dynamic ion mixing method contains at least one type of gas selected from the group consisting of helium, argon, neon, krypton and xenon.

### Claim 20 (depends on 16)

The method of producing a gas barrier film according to claim 16, wherein the plasma-forming gas used in the dynamic ion mixing method is a mixed gas further containing at least one type of gas selected from the group consisting of hydrogen, oxygen, nitrogen and fluorocarbons.

### Claim 21 (depends on 16)

The method of producing a gas barrier film according to claim 16, wherein the dynamic ion mixing method is carried out by applying a negative high voltage of −50 kV to −1 kV to the base in pulses.

### Claim 22 (depends on 16)

The method of producing a gas barrier film according to claim 16, wherein the thickness of the layer containing a polyorganosiloxane-based compound is prepared to be in the range of 0.01 μm to 100 μm.

### Claim 23 (depends on 16)

The method of producing a gas barrier film according to claim 16, wherein the polyorganosiloxane-based compound of the layer containing a polyorganosiloxane-based compound is selected to polydimethylsiloxane.

### Claim 24 (depends on 16)

The method of producing a gas barrier film according to claim 16, wherein a layer containing a fluorine-containing resin is provided on the base on the side opposite the side where the layer containing a polyorganosiloxane-based compound is formed.

### Claim 25 (depends on 16)

The method of producing a gas barrier film according to claim 16, wherein the content of the polyorganosiloxane-based compound in the layer containing a polyorganosiloxane-based compound contains 50% by weight or more.

### Claim 26 (depends on 16)

The method of producing a gas barrier film according to claim 16, wherein the thickness of the inorganic material layer is prepared to be in the range of 10 nm to 1000 nm.

### Claim 27 (depends on 1)

An electronic device produced by the method of producing a gas barrier film according to claim 1.

### Claim 28 (depends on 27)

The electronic device according to claim 27, wherein the electronic device is a solar cell module.

### Claim 29 (depends on 28)

The electronic device according to claim 28, wherein the gas barrier film is used as a back protective sheet.

### Claim 30 (depends on 27)

The electronic device according to claim 27, wherein the electronic device is an image display element.

### Claim 31 (depends on 1)

The method of producing a gas barrier film according to claim 1, wherein the dynamic ion mixing method is conducted by applying a radio frequency electrical power to the base, plasma-forming gas is plasmatized around the base, argon ions in the plasma collide with a target, and particles are scattered from the target, the scattered particles adhered to the surface of the layer containing the polyorganosiloxane-based compound and are deposited thereon resulting in the formation of a deposited film of particles.