# US 2014/0150858 A1 · Optoelectronic device and the manufacturing method thereof

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- Number: US 2014/0150858 A1
- Document ID: US20140150858A1
- Status: Published application
- Kind: A1
- Application number: 13/693,531
- Filed: 2012-12-04
- Published: 2014-06-05
- Earliest claimed: 2012-12-04
- Assignees: Epistar Corporation
- Applicants: Epistar Corporation
- Inventors: Yi-Hung Lin; Cheng-Hong Chen
- Web page: https://patentgrep.com/patent/US20140150858A1

## CPC

- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- H10F 10/163: comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
- H10F 71/1385: {Etching transparent electrodes}
- H10F 77/211: {for photovoltaic cells}
- Y02E 10/50: Photovoltaic [PV] energy
- Y02E 10/544: Solar cells from Group III-V materials
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.

## Claims

### Claim 1

An optoelectronic device, comprising:
an optoelectronic semiconductor stack layer;
a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface;
a first barrier layer covering the top surface;
a second barrier layer covering the bottom surface; and
a first metal oxide layer,
wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.

### Claim 2 (depends on 1)

An optoelectronic device according to claim 1, further comprises a second metal oxide layer between the first metal oxide layer and the side surface.

### Claim 3 (depends on 1)

An optoelectronic device according to claim 1, wherein the thickness ratio of the conductive layer to the first barrier layer or the second barrier layer is equal to or smaller than 300.

### Claim 4 (depends on 3)

An optoelectronic device according to claim 3, wherein the thickness of the conductive layer is in a range of 3 μm to 9 μm.

### Claim 5 (depends on 3)

An optoelectronic device according to claim 3, wherein the thickness of the first barrier layer or the second barrier layer is equal to or greater than 5 nm.

### Claim 6 (depends on 1)

An optoelectronic device according to claim 1, wherein the material of the conductive layer comprises Ag.

### Claim 7 (depends on 1)

An optoelectronic device according to claim 1, wherein the first barrier layer and the second barrier layer comprise Pd.

### Claim 8 (depends on 1)

An optoelectronic device according to claim 1, wherein the conductive layer further comprises a first sub-conductive layer, a second sub-conductive layer, and a third barrier layer to separate the first sub-conductive layer and the second sub-conductive layer.

### Claim 9 (depends on 8)

An optoelectronic device according to claim 8, wherein the thickness ratio of the first sub-conductive layer or the second sub-conductive layer to the third barrier layer is equal to or smaller than 300.

### Claim 10 (depends on 0)

An optoelectronic device according to claim 0, wherein the thickness of the first sub-conductive layer or the second sub-conductive layer is in a range of 1.5 μm to 4.5 μm.

### Claim 11 (depends on 0)

An optoelectronic device according to claim 0, wherein the thickness of the third barrier layer is equal to or greater than 5 nm.

### Claim 12 (depends on 8)

An optoelectronic device according to claim 8, wherein the material of the first sub-conductive layer and the second sub-conductive layer comprises Ag.

### Claim 13 (depends on 8)

An optoelectronic device according to claim 8, wherein the third barrier layer comprises Pd.

### Claim 14 (depends on 1)

An optoelectronic device according to claim 1, further comprises an ohmic contact layer between the semiconductor stack layer and the conductive layer.

### Claim 15 (depends on 14)

An optoelectronic device according to claim 14, wherein the material of the ohmic contact layer comprises GaAs.

### Claim 16 (depends on 1)

An optoelectronic device according to claim 1, wherein the first metal oxide layer comprises Pd.

### Claim 17 (depends on 2)

An optoelectronic device according to claim 2, wherein the second metal oxide layer comprises Ag.

### Claim 18

A method of manufacturing an optoelectronic device, comprising the steps of:
providing an optoelectronic semiconductor stack layer;
forming a second barrier layer on semiconductor stack layer;
forming a conductive layer on the second barrier layer, wherein the conductive layer comprises a side surface;
forming a first barrier layer on the conductive layer; and
providing a first metal oxide layer by oxidizing the first barrier layer, the conductive layer, and the second barrier layer so the first metal oxide layer covers the side surface.

### Claim 19 (depends on 18)

A method of manufacturing an optoelectronic device according to claim 18, wherein the step of forming a conductive layer on the second barrier layer further comprises the steps of forming a second sub-conductive layer on the second barrier layer, forming a third barrier layer on the second sub-conductive layer, and forming the first sub-conductive layer on the third barrier layer.

### Claim 20 (depends on 18)

A method of manufacturing an optoelectronic device according to claim 18, wherein an second metal oxide layer is formed on the side surface by oxidizing the conductive layer in the step of oxidizing the first barrier layer, the conductive layer and the second barrier layer.