# US 2014/0150826 A1 · Wafer cleaning apparatus and methods > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0150826 A1 - Document ID: US20140150826A1 - Status: Published application - Kind: A1 - Application number: 14/092,370 - Filed: 2013-11-27 - Published: 2014-06-05 - Earliest claimed: 2012-11-30 - Applicants: MEMC Singapore Pte. Ltd. (UEN200614794D) - Inventors: Peter D. Albrecht; Brian Schulte; Vandan Tanna; Terry Grace; Desmond Teo; Fu Shun Ng - Web page: https://patentgrep.com/patent/US20140150826A1 ## CPC - H10P 72/0416: {with the semiconductor substrates being dipped in baths or vessels} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A wafer cleaning apparatus includes a beam for holding a plurality of semiconductor or solar wafers. The beam includes at least one channel extending axially through the beam. An opening extends from the channel to a location between adjacent wafers. A manifold includes a conduit coupled to the channel and an immersion tank includes an ultrasonic transducer. ## Claims ### Claim 1 A wafer cleaning apparatus, comprising: a beam for supporting a plurality of semiconductor wafers, the beam including at least one channel extending axially through the beam; an opening extending from the channel to a location between adjacent wafers; a manifold including a conduit for facilitating liquid flow through the opening; and an immersion tank including an ultrasonic transducer, the immersion tank sized to receive at least a pair of adjacent wafers. ### Claim 2 (depends on 1) The apparatus according to claim 1, wherein the immersion tank is sized such that the wafers are completely submergible in a cleaning solution contained within the immersion tank. ### Claim 3 (depends on 1) The apparatus according to claim 1, further comprising a second manifold including a second conduit sealingly coupled to a second channel located at an opposite axial end of the sacrificial beam from the channel. ### Claim 4 (depends on 1) The apparatus according to claim 1, wherein the conduit is fixedly coupled to a rim defining an outer perimeter of the channel. ### Claim 5 (depends on 1) The apparatus according to claim 1, further comprising a liquid pump configured to supply a flow of liquid through the manifold and into the channel. ### Claim 6 (depends on 5) The apparatus according to claim 5, wherein the pump is configured to supply between 15 liters per minute to 50 liters per minute of liquid flow per manifold. ### Claim 7 (depends on 1) The apparatus according to claim 1, comprising a plurality of openings, wherein a combined area of the openings is approximately 15 times to 20 times greater than a cross-sectional area of the channel. ### Claim 8 (depends on 1) The apparatus according to claim 1, wherein the opening is a slot extending transverse to the channel. ### Claim 9 (depends on 1) The apparatus according to claim 1, comprising at least three channels. ### Claim 10 (depends on 9) The apparatus according to claim 9, wherein the opening is in flow communication with each of the at least three channels. ### Claim 11 (depends on 1) The apparatus according to claim 1, wherein the immersion tank includes a bottom wall and a sidewall, and the ultrasonic transducer is coupled to the bottom wall and a second ultrasonic transducer is coupled to the sidewall. ### Claim 12 (depends on 11) The apparatus according to claim 11, wherein each ultrasonic transducer is operational from about 50 Watts to 1500 Watts and from about 30 kHz to about 80 kHz. ### Claim 13 (depends on 1) The apparatus according to claim 1, wherein the conduit has a length that is less than the axial length of the channel. ### Claim 14 (depends on 1) The apparatus according to claim 1, wherein the beam is a sacrificial beam coupled to a plurality of semiconductor wafers. ### Claim 15 A method of removing contaminants from a pair of adjacent wafers bonded to a sacrificial beam, the method comprising: coupling a manifold to the sacrificial beam such that a fluid conduit of the manifold is in fluid communication with a channel that extends axially through the sacrificial beam; submerging the wafers in a liquid contained in an immersion tank, the immersion tank including an ultrasonic transducer; flowing the liquid through the manifold such that the liquid flows through the channel and an inter-wafer opening, and contacts the wafers; and operating the ultrasonic transducer to induce vibrations within the immersion tank. ### Claim 16 (depends on 15) The method according to claim 15, wherein flowing the liquid includes flowing between 15 liters per minute to 50 liters per minute of liquid. ### Claim 17 (depends on 15) The method according to claim 15, further comprising maintaining the conduit in a stationary position during the flowing of the liquid. ### Claim 18 (depends on 15) The method according to claim 15, further comprising operating the ultrasonic transducer at from about 50 Watts to 1500 Watts and from about 30 kHz to 80 kHz. ### Claim 19 (depends on 15) The method according to claim 15, wherein operating the ultrasonic transducer loosens debris on the semiconductor wafers and flowing the liquid through the inter-wafer opening carries the debris off of the wafers by entraining the debris in the liquid. ### Claim 20 (depends on 15) The method according to claim 15, further comprising coupling a second manifold to the sacrificial beam such that a second fluid conduit of the second manifold is in flow communication with an end of the channel opposite the other conduit. ### Claim 21 (depends on 20) The method according to claim 20, wherein flowing the liquid includes flowing the liquid through the second manifold.