# US 2014/0150558 A1 · Apparatus and method for characterizing adhesive bonding and osseointegration > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0150558 A1 - Document ID: US20140150558A1 - Status: Published application - Kind: A1 - Application number: 13/907,748 - Filed: 2013-05-31 - Published: 2014-06-05 - Earliest claimed: 2012-06-01 - Assignees: The Governors of the University of Alberta; Alberta Health Services - Inventors: Mohamed Mahmoud Taher EL Gowini; Walied Ahmed Mohamed Moussa; Edmond Hok Ming Lou - Web page: https://patentgrep.com/patent/US20140150558A1 ## CPC - G01H 11/08: using piezoelectric devices - G01N 29/2475: {Embedded probes, i.e. probes incorporated in objects to be inspected} - G01N 2291/0251: Solidification, icing, curing composites, polymerisation - G01H: MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract An apparatus and method is provided for characterizing adhesive bonding using an acoustic wave MEMS sensor. The sensor can consist of a silicon substrate, a thin aluminium nitride film on top of the substrate and a thin gold film above the aluminium nitride layer. An adhesive layer is added on top of the sensor and the dispersion property of acoustic waves in the layered configuration can be utilized for bonding integrity characterization. A wave dispersion model is developed to study the effect of changing the interface stiffness on the wave dispersion profile and to investigate the sensitivity of different sensor configurations. The results of the model illustrate that the dispersion profile shifts in the direction of decreasing wave velocity as the interface stiffness decreases. ## Claims ### Claim 1 An acoustic wave sensor, comprising: a) a semiconductor substrate; b) a piezoelectric layer disposed on the substrate; c) a metallic layer disposed on the piezoelectric layer; and d) an input electrode and an output electrode disposed on the substrate, the electrodes disposed between the substrate and the piezoelectric layer. ### Claim 2 (depends on 1) The sensor as set forth in claim 1, wherein the substrate comprises a silicon substrate. ### Claim 3 (depends on 1) The sensor as set forth in claim 1, wherein the piezoelectric layer comprises an aluminum-nitride film. ### Claim 4 (depends on 3) The sensor as set forth in claim 3, wherein the aluminum-nitride film is configured to electrically excite acoustic waves. ### Claim 5 (depends on 1) The sensor as set forth in claim 1, wherein the metallic layer comprises a gold film. ### Claim 6 (depends on 1) The sensor as set forth in claim 1, wherein one or both of the electrodes comprises a slanted finger interdigital configuration. ### Claim 7 (depends on 1) The sensor as set forth in claim 1, further comprising an adhesive layer disposed on the metallic layer. ### Claim 8 (depends on 8) The sensor as set forth in claim 8, wherein the adhesive layer is configured to adhere to a bone. ### Claim 9 An apparatus for characterizing adhesive bonding, the apparatus comprising an acoustic wave sensor, the sensor comprising: a) a semiconductor substrate; b) a piezoelectric layer disposed on the substrate; c) a metallic layer disposed on the piezoelectric layer; and d) an input electrode and an output electrode disposed on the substrate, the electrodes disposed between the substrate and the piezoelectric layer. ### Claim 10 (depends on 9) The apparatus as set forth in claim 9, wherein the substrate comprises a silicon substrate. ### Claim 11 (depends on 9) The apparatus as set forth in claim 9, wherein the piezoelectric layer comprises an aluminum-nitride film. ### Claim 12 (depends on 11) The apparatus as set forth in claim 11, wherein the aluminum-nitride film is configured to electrically excite acoustic waves. ### Claim 13 (depends on 9) The apparatus as set forth in claim 9, wherein the metallic layer comprises a gold film. ### Claim 14 (depends on 9) The apparatus as set forth in claim 9, wherein one or both of the electrodes comprises a slanted finger interdigital configuration. ### Claim 15 (depends on 9) The apparatus as set forth in claim 9, further comprising an adhesive layer disposed on the metallic layer. ### Claim 16 (depends on 15) The apparatus as set forth in claim 15, wherein the adhesive layer is configured to adhere to a bone. ### Claim 17 (depends on 9) The apparatus as set forth in claim 9, wherein the apparatus is configured for characterizing osseointegration of a man-man implant configured for insertion in a human body. ### Claim 18 (depends on 17) The apparatus as set forth in claim 17, further comprising the man-made implant wherein the apparatus is disposed in the man-made implant. ### Claim 19 A method for characterizing adhesive bonding, the method comprising the steps of: a) providing an acoustic wave sensor, comprising: i) a semiconductor substrate, ii) a piezoelectric layer disposed on the substrate, iii) a metallic layer disposed on the piezoelectric layer, and iv) an input electrode and an output electrode disposed on the substrate, the electrodes disposed between the substrate and the piezoelectric layer; b) placing the sensor between two surfaces or two materials to be adhered together; c) placing an adhesive layer between the two surfaces or two materials wherein an adhesive bond is formed between the two surfaces or two materials; d) exciting the sensor wherein the sensor generates acoustic waves wherein the acoustic waves propagate through the sensor and the adhesive layer; e) monitoring the acoustic waves; and f) determining the strength of the adhesive bond from the monitored acoustic waves. ### Claim 20 (depends on 19) The method as set forth in claim 19, wherein the substrate comprises a silicon substrate. ### Claim 21 (depends on 19) The method as set forth in claim 19, wherein the piezoelectric layer comprises an aluminum-nitride film. ### Claim 22 (depends on 21) The method as set forth in claim 21, wherein the aluminum-nitride film is configured to electrically excite acoustic waves. ### Claim 23 (depends on 19) The method as set forth in claim 19, wherein the metallic layer comprises a gold film. ### Claim 24 (depends on 19) The method as set forth in claim 19, wherein one or both of the electrodes comprises a slanted finger interdigital configuration. ### Claim 25 (depends on 19) The method as set forth in claim 19, further comprising disposing an adhesive layer disposed on the metallic layer. ### Claim 26 (depends on 25) The method as set forth in claim 25, wherein the adhesive layer is configured to adhere to a bone. ### Claim 27 (depends on 19) The method as set forth in claim 19, wherein the sensor is configured for characterizing osseointegration of a man-man implant configured for insertion in a human body. ### Claim 28 (depends on 27) The method as set forth in claim 27, further comprising disposing the sensor in the man-made implant.