Self-Biasing Radio Frequency Circuitry
AssigneeMarvell World Trade Ltd.
InventorsJinho Park, Yuan Lu, Li Lin
Life of this patent
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Abstract
The present disclosure describes self-biasing radio frequency circuitry. In some aspects a radio frequency (RF) signal is amplified via a circuit having a first transistor configured to source current to an output of the circuit and a second transistor configured to sink current from the output of the circuit, and another signal is provided, without active circuitry, from the output of the circuit to a gate of the first transistor effective to bias a voltage at the output of the circuit. By so doing, the output of the circuit can be biased without active circuitry which can reduce design complexity of and substrate area consumed by the circuit.
Claims20
A circuit comprising:
- a first transistor configured to source, based on a radio frequency (RF) signal received at an input of the circuit, current from a current source to an output of the circuit;
- a second transistor configured to sink, based on the RF signal received at the input of the circuit, current from the output of the circuit to a current sink;
- and
- non-active biasing circuitry operably connected between the output of the circuit and a gate of the first transistor or a gate of the second transistor, the non-active biasing circuitry configured to bias a voltage of the output of the circuit.
A method comprising:
- amplifying a radio frequency (RF) signal via a circuit having a first transistor and a second transistor, the first transistor configured to source current from a current source to an output of the circuit based on the RF signal, the second transistor configured to sink current from the output of the circuit to a current sink based on the RF signal;
- and
- providing, without active circuitry, another signal from the output of the circuit to a gate of the first transistor or a gate of the second transistor effective to bias a voltage at the output of the circuit.
An amplifier comprising:
- an input configured to receive a radio frequency (RF) signal;
- an output configured to transmit an amplified RF signal;
- a first transistor configured to provide the amplified RF signal by sourcing, based on the RF signal, current from a current source to the output of the amplifier;
- a second transistor configured to provide the amplified RF signal by sinking, based on the RF signal, current from the output of the amplifier to a current sink;
- non-active bias circuitry configured to provide a bias signal from the output of the amplifier to a gate of the first transistor or a gate of the second transistor effective to bias a voltage of the amplified RF signal;
- and
- non-active compensating circuitry configured to compensate the amplified RF signal, the non-active compensating circuitry connected in parallel with the non-active bias circuitry.
Dependencies are inferred from the claim text.