Semiconductor optical modulator
AssigneeMitsubishi Electric Corporation
InventorKazuhisa Takagi
Life of this patent
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Abstract
A semiconductor optical modulator includes a substrate, which has a first conductivity type, and a first electrode on a first main surface of the substrate. A first cladding layer having the first conductivity type, a transparent waveguide layer, a second cladding layer having the first conductivity type, an optical-absorption layer, and a third cladding layer having a second conductivity type, are sequentially laminated on a second main surface of the substrate. A ridge part is formed by removing a part of the third cladding layer and a part of the second cladding layer in a laminated direction. A second electrode on the ridge part is electrically connected to the third cladding layer.
Claims5
A semiconductor optical modulator comprising:
- a substrate having a first conductivity type and opposed first and second main surfaces;
- a first electrode on the first main surface of the substrate;
- a first cladding layer having the first conductivity type, a transparent waveguide layer, a second cladding layer having the first conductivity type, an optical-absorption layer, and a third cladding layer having a second conductivity type, sequentially laminated on the second main surface of the substrate in a laminating direction;
- a ridge part, which is formed by removing a part of the third cladding layer and a part of the second cladding layer in the laminating direction;
- and
- a second electrode on the ridge part and electrically connected to the third cladding layer.
A semiconductor optical modulator comprising:
- a substrate having a first conductivity type and opposed first and second main surfaces;
- a first electrode on the first main surface of the substrate;
- a cladding layer having the first conductivity type, an optical-absorption layer, a second cladding layer having a second conductivity type, a transparent waveguide layer and a third cladding layer having the second conductivity, laminated on the second main surface of the substrate sequentially, in a laminating direction;
- a ridge part, which is formed by removing a part of the third layer in in the laminating direction;
- and
- a second electrode on the ridge part and electrically connected to the third layer.
A semiconductor optical modulator comprising:
- a substrate having a first conductivity type and opposed first and second main surfaces;
- a first electrode on the first main surface of the substrate;
- a first cladding layer having the first conductivity type, a transparent waveguide layer and a second cladding layer having a second conductivity type, laminated on the second main surface of the substrate sequentially, in a laminating direction;
- a ridge part, which is formed by removing a part of the second cladding layer in laminating direction;
- a channel part sandwiching the ridge part;
- a pedestal part located at an outer side of the channel part, and
- one of a third electrode on the channel part and electrically connected to the second cladding layer on the channel part, and (ii) a fourth electrode on the pedestal part and electrically connected to the second cladding layer on the pedestal part.
Dependencies are inferred from the claim text.