Memory system, program method thereof, and computing system including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-Ho Jang, In-Hwan Choi, Woon-Jae Chung, Song-Ho Yoon, Kyung-Wook Ye
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Abstract
Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.
Claims1
A method of programming a multi-bit flash memory device which includes memory cells, each configured to store multi-bit data, the method comprising:
- storing a first data, the portion of the first data being stored into a lower page;
- after the storing the first data, setting at least one page affecting the lower page to free page;
- and
- then storing a second data, starting from a next page of the at least one page, wherein the next page is a lower page not affecting the lower page in which the portion of the first data is stored.
Dependencies are inferred from the claim text.