Loading patent…
AssigneeHewlett-Packard Development Company, L.P.
InventorsFeng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
Estimating the term…
A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
A memristor, comprising:
A method of switching a memristor having first and second parallel electrodes, a conduction channel disposed between the first and second electrodes and containing a Fermi glass, and a laterally disposed reservoir zone for sourcing and sinking a species of mobile ions, the method comprising:
Dependencies are inferred from the claim text.