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US 2014/0112057 A1Published application
Apparatus and method for reforming resistive memory cells
AssigneeMarvell World Trade Ltd.
InventorsPantas Sutardja, Albert Wu, Winston Lee, Peter Lee, Runzi Chang
Life of this patent
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Abstract
A memory includes an array of memory cells, a first module and a second module. The first module is configured to compare a first state of a memory cell with a reference. The memory cell is in the array of memory cells. The second module is configured to, subsequent to a read cycle or a write cycle of the memory cell and based on the comparison, reform the memory cell to adjust a difference between the first state and a second state of the memory cell.
Claims21
A memory comprising:
- an array of memory cells;
- a first module configured to compare a first state of a memory cell with a reference, wherein the memory cell is in the array of memory cells;
- and
- a second module configured to, subsequent to a read cycle or a write cycle of the memory cell and based on the comparison, reform the memory cell to adjust a difference in resistance between the first state and a second state of the memory cell.
1 more element
A network device comprising:
- a resistive memory comprising an array of memory cells;
- a first module configured to compare a first state of a memory cell with a reference, wherein the memory cell is in the array of memory cells;
- and
- a second module configured to, subsequent to a read cycle or a write cycle of the memory cell and based on the comparison, reform the memory cell to adjust a difference in resistance between the first state and a second state of the memory cell.
1 more element
A method comprising:
- compare a first state of a memory cell with a reference, wherein the memory cell is in an array of memory cells, wherein the first state is indicative of a first resistance of the memory cell;
- and
- subsequent to a read cycle or a write cycle of the memory cell and based on the comparison, reforming the memory cell to adjust a difference in resistance between the first state and a second state of the memory cell, wherein the second state is indicative of a second resistance of the memory cell.
Dependencies are inferred from the claim text.