US 2014/0112053 A1 · Write driver in sense amplifier for resistive type memory

Abstract

Example embodiments include a level shifting write driver in a sense amplifier for a resistive type memory. The write driver may include a cross-coupled latch circuit, a first output section, a second output section, and an input section. The first output section includes one or more first driving transistors to drive a first current through the first output section and not through the cross-coupled latch. The second output section includes one or more second driving transistors configured to drive a second current through the second output section and not through the cross-coupled latch. The current flows of the outputs sections are isolated from the latch circuit. In some embodiments, no two PMOS type transistors are serially connected, thereby reducing the consumption of die area. In some embodiments, a single control signal is used to operate the write driver.

Claims20

Dependent claims

A write driver in a sense amplifier for a resistive type memory, comprising:

a cross-coupled latch including at least two latch transistors;
a first output section including one or more first driving transistors coupled to a first differential output terminal, the one or more first driving transistors being configured to drive a first current through the first output section and not through the cross-coupled latch;
and
a second output section including one or more second driving transistors coupled to a second differential output terminal, the one or more second driving transistors being configured to drive a second current through the second output section and not through the cross-coupled latch.

1 more element

Dependencies are inferred from the claim text.

Write driver in sense amplifier for resistive type memory

Life of this patent

Write driver in sense amplifier for resistive type memory

Life of this patent

Abstract

Claims20