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US 2014/0112050 A1Published application
Semiconductor devices and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorJemin PARK
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a plurality of word lines; a plurality of bit lines; and a plurality of bit line node contacts. The plurality of word lines extend in a first direction in or on a substrate. The plurality of bit lines crosses over the plurality of word lines. Each of the plurality of bit line node contacts connects a corresponding bit line to the substrate, and each of the plurality of bit line node contacts has a width substantially equal to a width of the corresponding bit line.
Claims25
A semiconductor device comprising:
- a plurality of word lines extending in a first direction in or on a substrate;
- a plurality of bit lines crossing over the plurality of word lines;
- and
- a plurality of bit line node contacts, each of the plurality of bit line node contacts connecting a corresponding bit line to the substrate, and each of the plurality of bit line node contacts having a width substantially equal to a width of the corresponding bit line.
1 more element
11-17. (canceled)
A semiconductor device comprising:
- at least two storage node contacts in or on a substrate;
- a bit line node contact on the substrate between the at least two storage node contacts;
- and
- a bit line on the bit line node contact between the at least two storage node contacts, each of the bit line node contact and the bit line being spaced apart from sidewalls of the at least two storage node contacts by substantially the same distance.
1 more element
A semiconductor device comprising:
- at least two storage node contacts in or on a substrate;
- a bit line node contact in or on the substrate between the at least two storage node contacts;
- and
- a bit line on the bit line node contact between the at least two storage node contacts, the bit line node contact and the bit line being spaced apart from sidewalls of the at least two storage node contacts by a spacer.
1 more element
Dependencies are inferred from the claim text.