Semiconductor memory device and method for manufacturing the same
AssigneeSK hynix Inc.
InventorsSung Wook JUNG, Jung Seok OH
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Abstract
The present technology includes a semiconductor memory device and a method of manufacturing the same. The semiconductor device includes insulation patterns and cell word lines alternately stacked on a substrate. A cell channel layer is formed through the insulation patterns and the cell word lines. A select channel layer is connected to the cell channel layer, and the select channel layer has a resistance higher than a resistance of the cell channel layer. A select line surrounds the select channel layer.
Claims20
A semiconductor memory device, comprising:
- insulation patterns and cell word lines alternately stacked on a substrate;
- cell channel layers formed through the insulation patterns and the cell word lines;
- select channel layers connected to the cell channel layers, the select channel layers each having a resistance higher than a resistance of each of the cell channel layers;
- and
- select lines surrounding the select channel layers.
A method of manufacturing a semiconductor memory device, the method comprising:
- forming a first stacked structure by alternately stacking a plurality of first material layers and second material layers on a substrate;
- forming cell channel layers passing through the first stacked structure;
- and
- forming select channel layers to connected to the cell channel layers, wherein each of the select channel layers has a resistance that is greater than a resistance of the cell channel layer.
Dependencies are inferred from the claim text.