Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection

A circuit comprising a bi-directional high voltage electrostatic discharge (ESD) protection element, the bi-directional high voltage ESD protection element comprising:

• a p-type substrate;
• an N+ doped buried layer disposed adjacent to the substrate;
• a first P-type well region disposed adjacent to the N+ doped buried layer;
• a second P-type well region disposed adjacent to the N+ doped buried layer;
• and
• an N-type well region adjacent to the N+ doped buried layer and encompassing the first and second P-type well regions such that at least a portion of the N-type well region is interposed between the first and second P-type well regions;
• wherein the first P-type well comprises first, second, and third N+ doped plates, first and second P+ doped plates, and first and second gate structures, the first P+ doped plate being disposed adjacent to the first N+ doped plate, the first gate structure being interposed between the first and second N+ doped plate, the second gate structure being interposed between the second and third N+ doped plate, and the second P+ doped plate being disposed adjacent to the third N+ doped plate;
• and
• further wherein the second P-type well comprises fourth, fifth, and sixth N+ doped plates, third and fourth P+ doped plates, and third and fourth gate structures, the third P+ doped plate being disposed adjacent to the fourth N+ doped plate, the third gate structure being interposed between the fourth and fifth N+ doped plate, the fourth gate structure being interposed between the fifth and sixth N+ doped plate, and the fourth P+ doped plate being disposed adjacent to the sixth N+ doped plate.