Method and apparatus for ultraviolet (uv) patterning with reduced outgassing

A method for forming a pattern on a semiconductor device, said method comprising:

• providing an ultraviolet (UV) lithography apparatus including a stage for receiving a substrate thereon;
• directing an ultraviolet (UV) light beam to a substrate disposed on said stage;
• causing an inert gas to flow across and in close proximity to a surface of said substrate disposed on said stage;
• and
• exhausting said inert gas from said surface of said substrate.

A method for forming a pattern on a semiconductor device, said method comprising:

• providing an extreme ultraviolet (EUV) lithography apparatus including a stage for receiving a substrate thereon and at least one reflective member;
• directing an EUV light beam to a photoresist-coated substrate disposed on said stage by reflection off of said at least one reflective member;
• causing a laminar sheet of inert gas to flow across and in close proximity to a surface of said substrate by delivering said inert gas from an open channel that at least partially surrounds said stage;
• and
• exhausting said inert gas from said surface of said substrate,
• wherein said inert gas comprises at least one of helium, neon, argon, krypton, xenon, and radon.