Image capturing apparatus, manufacturing method thereof, and camera

A back-side illumination image capturing apparatus comprising:

• a semiconductor substrate having a first surface for receiving incident light and a second surface located on the opposite side as the first surface, and including a photoelectric conversion portion, and a gate electrode located above the second surface;
• an interlayer insulation film disposed above the second surface of the semiconductor substrate;
• a contact plug connected to the gate electrode;
• and
• a light-cutting portion for cutting light, of the incident light, that has passed through the photoelectric conversion portion,
• wherein part of the interlayer insulation film is located between the light-cutting portion and the semiconductor substrate.

A method for manufacturing a back-side illumination image capturing apparatus, the image capturing apparatus including:

• a semiconductor substrate having a first surface for receiving incident light and a second surface located on the opposite side as the first surface, and including a photoelectric conversion portion, and a gate electrode located above the second surface;
• a contact plug connected to the gate electrode;
• and
• a light-cutting portion for cutting light, of the incident light, that has passed through the photoelectric conversion portion, and
• the method comprising:
• forming a first insulating layer above the second surface of the semiconductor substrate and forming an interlayer insulation film above the first insulating layer;
• forming a first opening for forming the contact plug by etching away part of the interlayer insulation film and part of the first insulating layer;
• and
• forming a second opening for forming the light-cutting portion by etching away another part of the interlayer insulation film,
• wherein in the step of forming the first opening, the first opening reaches the gate electrode;
• and
• in the step of forming the second opening, at least part of the first insulating layer is left between the second opening and the semiconductor substrate.