Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
AssigneesNanoholdings, LLC, University of Florida Research Foundation, Inc.
InventorsFranky So, Do Young KIim, Bhabendre K. Pradhan
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Abstract
Imaging devices include an IR up-conversion device on a CMOS imaging sensor (CIS) where the up-conversion device comprises a transparent multilayer stack. The multilayer stack includes an IR sensitizing layer and a light emitting layer situated between a transparent anode and a transparent cathode. In embodiments of the invention, the multilayer stack is formed on a transparent support that is coupled to the CIS by a mechanical fastener or an adhesive or by lamination. In another embodiment of the invention, the CIS functions as a supporting substrate for formation of the multilayer stack.
Claims18
An imaging device, comprising a transparent IR up-conversion device and a CMOS image sensor (CIS), wherein the transparent IR up-conversion device is a multilayer stack comprising:
- an anode layer;
- a hole blocking layer;
- an IR sensitizing layer;
- a hole transport layer;
- a light emitting layer;
- an electron transport layer;
- and a cathode.
Dependencies are inferred from the claim text.