Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorMasato ISHII
Life of this patent
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Abstract
An object is to provide a low-power semiconductor device which does not require a latch circuit to hold data at the output of inverter circuits. In the semiconductor device, an input of a first inverter circuit is connected to an input terminal through a source and a drain of a first transistor. An input of a second inverter circuit is connected to an output of the first inverter circuit through a source and a drain of a second transistor. An output of the second inverter is connected to an output terminal. An inverted clock signal and a clock signal are input to gates of the first transistor and the second transistor, respectively. The first and the second transistor have extremely low off-current, which allows the output potential of the device to remain unchanged even when the input varies.
Claims25
(canceled)
A semiconductor device comprising:
- a wiring,
- a transistor;
- and
- an inverter circuit comprising inverter transistors;
- wherein one of a source and a drain of the transistor is electrically connected to the wiring;
- wherein the other of the source and the drain of the transistor is electrically connected to an input of the inverter circuit;
- wherein the transistor comprises a channel formation region in an oxide semiconductor layer;
- and
- wherein at least one of the inverter transistors comprises a channel formation region in a material other than an oxide semiconductor material.
A semiconductor device comprising:
- a wiring,
- a first transistor;
- a second transistor;
- an inverter circuit comprising inverter transistors;
- and
- a high voltage supply line and a low voltage supply line each electrically connected to the inverter circuit,
- wherein one of a source and a drain of the first transistor is electrically connected to the wiring;
- wherein the other of the source and the drain of the first transistor is electrically connected to an input of the inverter circuit;
- wherein the other of the source and the drain of the first transistor is electrically connected to one of the low voltage supply line and the high voltage supply line through a source and a drain of the second transistor;
- wherein the first transistor comprises a channel formation region in an oxide semiconductor layer;
- and
- wherein at least one of the inverter transistors comprises a channel formation region in a material other than an oxide semiconductor material.
A semiconductor device comprising:
- a wiring,
- a first transistor;
- a second transistor;
- a third transistor;
- an inverter circuit comprising inverter transistors;
- and
- a high voltage supply line and a low voltage supply line each electrically connected to the inverter circuit,
- wherein one of a source and a drain of the first transistor is electrically connected to the wiring;
- wherein the other of the source and the drain of the first transistor is electrically connected to an input of the inverter circuit;
- wherein the other of the source and the drain of the first transistor is electrically connected to the high voltage supply line through a source and a drain of the second transistor;
- wherein the other of the source and the drain of the first transistor is electrically connected to the low voltage supply line through a source and a drain of the third transistor;
- wherein the first transistor comprises a channel formation region in an oxide semiconductor layer;
- and
- wherein at least one of the inverter transistors comprises a channel formation region in a material other than an oxide semiconductor material.
Dependencies are inferred from the claim text.