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US 2014/0111250 A1Published application
Methods and devices for matching transmission line characteristics using stacked metal oxide semiconductor (mos) transistors
AssigneeQUALCOMM Incorporated
InventorsMiao Li, Jingcheng Zhuang, Yan Hu, Xiaoliang Bai, Jing Kang
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Abstract
An output driver for electrostatic discharge (ESD) protection includes a first pair of stacked metal oxide semiconductor field-effect transistor (MOS) devices coupled between a power terminal and a first differential output terminal. The output driver also includes a second pair of stacked MOS devices coupled between a second differential output terminal and a ground terminal.
Claims21
An output driver, comprising:
- a first pair of stacked metal oxide semiconductor field-effect transistor (MOS) devices coupled between a power terminal and a first differential output terminal;
- and
- a second pair of stacked MOS devices coupled between a second differential output terminal and a ground terminal.
A method of operating an output driver, comprising:
- generating a first set of bias voltages for a first pair of stacked metal oxide semiconductor field-effect transistor (MOS) devices coupled between a power terminal and a first differential output terminal to match a first transmission line characteristic;
- and
- generating a second set of bias voltages for a second pair of stacked MOS devices coupled between a second differential output terminal and a ground terminal to match a second transmission line characteristic.
An output driver, comprising:
- first means for switching electronic signals stacked on a second means for switching electronic signals, the first and second switching means coupled between a power terminal and a first differential output terminal;
- and
- third means for switching electronic signals stacked on a fourth means for switching electronic signals, the third and fourth switching means coupled between a second differential output terminal and a ground terminal.
Dependencies are inferred from the claim text.