TSV Formation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Puu Jeng, Wen-Chih Chiou, Ku-Feng Yang
Life of this patent
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Abstract
A device includes a substrate having a front side and a backside, the backside being opposite the front side. An isolation layer is disposed on the front side of the substrate, wherein first portions of isolation layer and the substrate are in physical contact. A through substrate via (TSV) extends from the front side to the backside of the substrate. An oxide liner is on a sidewall of the TSV. The oxide liner extends between second portions of the substrate and the isolation layer. A dielectric layer having a metal pad is disposed over the isolation layer on the front side of the substrate. The metal pad and the TSV are formed of a same material.
Claims20
A method comprising:
- forming a dielectric layer over a substrate;
- forming a first opening in the dielectric layer;
- forming a second opening in the substrate, wherein the first and the second openings are aligned and have different horizontal dimensions;
- forming a first isolation layer on sidewalls of the second opening using a thermal oxidation process;
- filling a metallic material into the first and the second openings;
- and
- performing a planarization on the metallic material to remove excess portions of the metallic material above a top surface of the dielectric layer, wherein remaining portions of the metallic material form a metal pad in the first opening and a through-substrate via (TSV) in the second opening.
A method comprising:
- forming an isolation layer over a substrate;
- forming a dielectric layer over the isolation layer;
- patterning a first opening in the dielectric layer;
- etching the substrate to expand the first opening in the dielectric layer into a second opening in the substrate, wherein the second opening has a second horizontal dimension less than a first horizontal dimension of the first opening;
- performing a thermal oxidation to form an oxide liner in the second opening;
- filling a metallic material into the first and the second openings;
- and
- performing a planarization on the metallic material to remove excess portions of the metallic material above a top surface of the dielectric layer to form a metal pad in the first opening and a through-substrate via (TSV) in the second opening.
A device comprising:
- a substrate having a front side and a backside, the backside being opposite the front side;
- an isolation layer on the front side of the substrate, wherein a first portion of isolation layer and the substrate are in physical contact;
- a through substrate via (TSV) extending from the front side to the backside of the substrate;
- an oxide liner on a sidewall of the TSV, wherein the oxide liner extends between a second portion of the isolation layer and the substrate;
- a dielectric layer over the isolation layer on the front side of the substrate;
- and
- a metal pad in the dielectric layer over the TSV, wherein the metal pad and the TSV are formed of a same material.
Dependencies are inferred from the claim text.