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US 2014/0110857 A1Published application
Reduction chemistry for etching
AssigneeGLOBALFOUNDRIES Inc.
InventorRobin Abraham KOSHY
Life of this patent
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Abstract
An etching is performed with reduction chemistry to prevent erosion of a hard mask. Embodiments include forming a hard mask over one or more layers above a substrate, patterning the hard mask to form openings in the hard mask, and etching the one or more layers with an etchant including hydrogen (H2) to remove portions of the one or more layers to form one or more vertical interconnect accesses (VIAs)
Claims20
A method comprising:
- forming a hard mask over one or more layers above a substrate;
- patterning the hard mask to form openings in the hard mask;
- and
- etching the one or more layers with an etchant comprising hydrogen (H2) to remove portions of the one or more layers forming one or more vertical interconnect accesses (VIAs).
1 more element
A device comprising:
- a substrate;
- an interlayer dielectric (ILD) above the substrate;
- and
- at least one vertical interconnect access (VIA) in the ILD formed by an etchant of the ILD comprising hydrogen (H2).
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A method comprising:
- forming a metal hard mask of titanium nitride (TiN) over an interlayer dielectric (ILD) above a substrate;
- patterning the metal hard mask to form one or more openings corresponding to one or more locations for one or more vertical interconnect accesses (VIAs) in the ILD;
- and
- etching the ILD with a reactive ion etch (RIE) comprising hydrogen (H2), and being substantially free of oxygen (O2), to form recesses in the ILD for the VIAs.
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Dependencies are inferred from the claim text.