Strong, heat stable junction
AssigneeU.S. Army Research Laboratory ATTN: RDRL-LOC-I
InventorsPatrick J. Taylor, Sudhir Trivedi, Wendy L. Sarney
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Abstract
Provided among other things is an electrical device comprising: a first component that is a semiconductor or an electrical conductor; a second component that is an electrical conductor; and a strong, heat stable junction there between including an intermetallic bond formed of: substantially (a) indium (In), tin (Sn) or a mixture thereof, and (b) substantially nickel (Ni). The junction can have an electrical contact resistance that is small compared to the resistance of the electrical device.
Claims20
An electrical device comprising:
- a first component that is a semiconductor or an electrical conductor;
- a second component that is an electrical conductor;
- and
- a strong, heat stable junction there between including an intermetallic bond formed of (a) substantially indium (In), tin (Sn) or a mixture thereof, and (b) substantially nickel (Ni).
A method of forming a junction between a first material that is a conductor or semiconductor to a second material that is a conductor or semiconductor, comprising:
- heating the prospective junction which comprises a layer of substantially indium, tin, or mixture thereof aligned against a layer of substantially nickel to a temperature of about 400° C. or more, thereby forming a strong, heat stable intermetallic bond between said layers.
A strong, heat stable junction comprising:
- an intermetallic bond formed of (a) substantially indium (In), tin (Sn) or a mixture thereof, and (b) substantially nickel (Ni).
Dependencies are inferred from the claim text.