Wire bondable surface for microelectronic devices
AssigneeAtotech Deutschland GmbH
InventorsAlbrecht Uhlig, Josef Gaida, Christof Suchentrunk
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Abstract
The present invention concerns thin diffusion barriers in metal and metal alloy layer sequences of contact area/barrier layer/first bonding layer type for metal wire bonding applications. The diffusion barrier is selected from Co-M-P. Co-M-B and Co-M-B—P alloys wherein M is selected from Mn, Zr, Re, Mo, Ta and W having a thickness in the range 0.03 to 0.3 μm. The first bonding layer is selected from palladium and palladium alloys.
Claims18
A semiconducting substrate comprising at least one metal layer sequence to produce a metal wire bondable surface wherein said layer sequence consists in this order of
- (i) a contact area,
- (ii) a barrier layer selected from Co-M-B, Co-M-P and Co-M-B—P alloys
- wherein M is selected from the group consisting of Mn, Zr, Re, Mo, Ta and W and the thickness of said barrier layer ranges from 0.03 to 0.3 μm and
- (iii) pure palladium as a first bonding layer having a thickness in the range of 0.05 to 0.3 μm.
Dependencies are inferred from the claim text.