Semiconductor Unit with Submount for Semiconductor Device
AssigneeIIPG Photonics Corporation
InventorsAlexander Ovtchinnikov, Alexey Komissarov, Igor Berishev, Svetlan Todorov
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Abstract
A semiconductor unit includes a submount and a chip coupled to the submount. The submount is configured with a base and a plurality of layers between the base and the chip. One of the layers, a heat-spreading electro-conducting sliver (“Ag”) layer, is deposited atop the base. The thickness of the Ag layer is selected so that a cumulative coefficient of thermal expansion of the submount substantially matches that one of the chip. Coupled to the active zone of the chip is a stress-dumping layer made from elastic malleable materials.
Claims13
A semiconductor unit comprising:
- a base,
- a chip spaced from the base, and
- a heat-spreading electro-conducting Ag layer deposited atop the base and coupled to the chip, wherein the base and the Ag layer determines a submount.
A method of manufacturing a semiconductor unit comprising:
- providing a base,
- depositing a heat-Spreading electro-conducting Ag layer atop the base;
- and
- soldering the base and Ag layers to a chip at elevated temperatures.
Dependencies are inferred from the claim text.