Metal Bump Joint Structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJing-Cheng Lin
Life of this patent
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Abstract
A structure comprises a first semiconductor chip with a first metal bump and a second semiconductor chip with a second metal bump. The structure further comprises a solder joint structure electrically connecting the first semiconductor chip and the second semiconductor chip, wherein the solder joint structure comprises an intermetallic compound region between the first metal bump and the second metal bump, wherein the intermetallic compound region is with a first height dimension and a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.
Claims20
A structure comprising:
- a first semiconductor component comprising:
- a first metal bump formed over a top surface of the first semiconductor component;
- and
- a first barrier layer formed over the first metal bump;
- a second semiconductor component comprising:
- a second metal bump formed over a top surface of the second semiconductor component;
- and
- a second barrier layer formed over the second metal bump;
- and
- a solder joint structure electrically connecting the first metal bump and the second metal bump, wherein the solder joint structure comprises:
- an intermetallic compound region formed between the first barrier layer and the second barrier layer, wherein the intermetallic compound region is with a first height dimension;
- and
- a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.
A device comprising:
- a first semiconductor chip comprising:
- a first semiconductor substrate;
- a first interconnect structure formed over the first semiconductor substrate;
- a first copper bump formed over the first interconnect structure;
- and
- a first barrier layer overlying the first copper bump;
- a second semiconductor chip stacked on the first semiconductor chip, wherein the semiconductor chip comprise:
- a second semiconductor substrate;
- a second interconnect structure formed over the second semiconductor substrate;
- a second copper bump formed over the second interconnect structure;
- and
- a second barrier layer overlying the second copper bump;
- and
- a solder joint structure electrically connecting the first copper bump and the second copper bump, wherein the solder joint structure comprises:
- an intermetallic compound region formed between the first barrier layer and the second barrier, wherein the intermetallic compound region is with a first height dimension;
- and
- a surrounding portion formed along exterior walls of the first copper bump and the second copper bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.
A method comprising:
- forming a first metal bump over a top surface of a first semiconductor component;
- depositing a first barrier layer over the first metal bump;
- forming a second metal bump over a top surface of a second semiconductor component;
- depositing a second barrier layer over the second metal bump;
- and
- bonding the second semiconductor component on the first semiconductor component through a reflow process, wherein a solder ball is melted to form a solder joint structure comprising:
- an intermetallic compound region formed between the first barrier layer and the second barrier, wherein the intermetallic compound region is with a first height dimension;
- and
- a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.
Dependencies are inferred from the claim text.