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US 2014/0110838 A1Published application
Semiconductor devices and processing methods
AssigneeInfineon Technologies AG
InventorsMichael Rogalli, Wolfgang Lehnert
Life of this patent
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Abstract
Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.
Claims64
A semiconductor device, comprising:
- a final metal layer, comprising a top side and at least one sidewall;
- a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer;
- wherein the passivation layer has a substantially uniform thickness.
A method for processing a semiconductor device, comprising:
- forming a final metal layer having a top side and at least one sidewall;
- forming a passivation layer over at least part of at least one of the top side and the at least one sidewall of the final metal layer by means of an atomic layer deposition process.
A metallization structure arrangement, comprising
- a semiconductor carrier comprising a metallization structure formed over a surface of the semiconductor carrier;
- and
- a layer comprising aluminum oxide disposed over at least a part of the metallization structure.
A semiconductor chip arrangement, comprising
- a semiconductor chip comprising a metallization structure formed over a surface of the semiconductor chip;
- an aluminum oxide layer and a passivation layer disposed at least partially over the metallization structure.
A method for manufacturing a metallization structure arrangement, the method comprising
- disposing a layer comprising aluminum oxide over a metallization structure, the metallization structure being disposed over a surface of a semiconductor carrier.
Dependencies are inferred from the claim text.