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AssigneePanasonic Corporation
InventorsNorihito Tsukahara, Toshiyuki Kojima, Takayuki Hirose, Keiko Ikuta, Kohichi Tanda
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A pressed-contact type semiconductor device includes a power semiconductor element, on an upper surface of which at least a first electrode is formed and on a lower surface of which at least a second electrode is formed, lead frames which face the first electrode and the second electrode of the power semiconductor element respectively, and a clip which applies a pressure to the lead frames while the power semiconductor element is sandwiched by the lead frames, wherein a metallic porous plating part is formed on a surface which faces the first electrode or the second electrode, the surface being a surface of at least one of the lead frames.
A method for manufacturing a pressed-contact type semiconductor device which has a semiconductor element, on an upper surface of which at least a first electrode is formed and on a lower surface of which at least a second electrode is formed, and a pair of lead frame members which face the first electrode and the second electrode of the semiconductor element respectively comprising:
A pressed-contact type semiconductor device comprising:
Dependencies are inferred from the claim text.