Backside protection for a wafer-level chip scale package (wlcsp)
AssigneeNXP B.V.
InventorsHartmut BUENNING, Christian Zenz
Life of this patent
Estimating the term…
Abstract
Consistent with an example embodiment, there is a semiconductor device, having a topside surface and an underside surface, the semiconductor device comprises an active device of an area defined on the topside surface, the topside surface having a first area. A protective material is on to the underside surface of the semiconductor device, the protective material has an area greater than the first area. A laminating film attaches the protective material to the underside surface. The protective material serves to protect the semiconductor device from mechanical damage during handling and assembly onto a product's printed circuit board.
Claims7
A method for assembling a wafer level chip scale processed (WLCSP) wafer, the wafer having a topside surface and an underside surface, a plurality of device die on the topside surface, the method comprising:
- back grinding, to a first thickness, the underside surface the wafer;
- mounting the underside of wafer onto a first sheet of dicing foil;
- sawing the wafer to a depth of the first thickness;
- stretching the dicing foil and making a space between each one of the plurality device die;
- remounting the plurality of spaced device die on the topside surface onto a second sheet of dicing foil;
- laminating a layer of protection material of a second thickness onto the underside of the plurality of spaced device die;
- sawing through the protection material between each of the plurality of spaced device die to a depth of the second thickness ,
- wherein each of the plurality of spaced device die has a protective layer on the underside, the protective layer having an area greater than the area of each one of the plurality of device die.
A semiconductor device, having a topside surface and an underside surface, the semiconductor device of a thickness, comprising:
- an active device of an area defined on the topside surface, the topside surface having a first area;
- a protective material on to the underside surface of the semiconductor device, the protective material having an area greater than first area;
- and
- a laminating film of the same area of that of the protective material, attaching the protective material to the underside surface;
- wherein a stand-off distance of the combination of the protective material and of laminating film is a function of the semiconductor device thickness and the tangent of an angle of tooling impact upon a vertical side surface the semiconductor device.
Dependencies are inferred from the claim text.